Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAs

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概要

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• The reduction of native oxides on an InAs surface using various wet and dry chemical treatments, including hydrochloric acid (HCl) treatment, sulfide treatment, and in situ trimethyl aluminum (TMA) treatment before the atomic layer deposition (ALD) of Al2O3 on InAs is studied. X-ray photoelectron spectrum (XPS) results show that the effect of surface cleaning by TMA was apparent almost after the first pulse but that TMA cleaning is not as effective as wet chemical surface cleaning. The combination of wet chemical treatment and TMA pretreatment is the most effective method for InAs surface cleaning, as indicated by the XPS analysis. Capacitance–voltage ($C$–$V$) and current density–voltage ($J$–$V$) characteristics on metal–oxide–semiconductor capacitance (MOSCAP) structures were also investigated to evaluate the Al2O3/n-InAs interface quality after different surface treatments, and the results are consistent with the XPS analysis.

• 2010-11-25

著者

• Chang Chia-yuan

  Department Of Chemical Engineering National Taiwan University

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• Wong Yuen-yee

  Department Of Materials Science And Engineering National Chiao Tung University

• Trinh Hai-dang

  Department Of Materials Science And Engineering National Chiao Tung University

• Lin Yueh-chin

  Department Of Materials Science And Engineering National Chiao-tung University

• Tran Binh-tinh

  Department Of Materials Science And Engineering National Chiao Tung University

• Nguyen Hong-quan

  Department Of Materials Science And Engineering National Chiao Tung University

• Lin Yueh-Chin

  Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan, R.O.C

• Chang Edward

  Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan, R.O.C

• Yu Chih-Chieh

  Instrument Technology Research Center, National Applied Research Laboratories, 20 R&D Road VI, Hsinchu Science Park, Hsinchu 300, Taiwan, R.O.C

• Yu Chih-Chieh

  Instrument Technology Research Center, National Applied Research Laboratories, 20 R&D Road VI, Hsinchu Science Park, Hsinchu 300, Taiwan, R.O.C

• Wong Yuen-Yee

  Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan, R.O.C

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