New Cu/Mo/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs for InGaP/GaAs Heterojunction Bipolar Transistors

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概要

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• The feasibility of using novel Cu/Mo/Ge/Pd ohmic contacts on n+-GaAs for heterojunction bipolar transistors (HBTs) is investigated. The electrical and material characteristics of the Cu/Mo/Ge/Pd/n+-GaAs structure were studied. After thermal annealing at 350 °C, the specific contact resistances of the copper ohmic contacts Cu/Mo/Ge/Pd were measured to be $2.8\times 10^{-7}$ $\Omega$ cm2. Judging from the data of sheet resistance, X-ray diffraction analysis, Auger electron spectroscopy, and transmission electron microscopy, the Cu/Mo/Ge/Pd contact structure was very stable after annealing at 350 °C. However, after 400 °C annealing, the reaction of copper with the underneath layers started to occur and formed MoGe2, Cu3Ga and Ge3Cu phases. An InGaP/GaAs HBT with Cu/Mo/Ge/Pd contact metals was fabricated and compared with an HBT fabricated with traditional Au/Ni/Ge/Au contact metals. These two kinds of HBTs showed similar device characteristics. After reaching thermal stability and performing a high current-accelerated stress test at a current density of 120 kA/cm2 for 24 h, the device with the Cu/Mo/Ge/Pd ohmic contacts still exhibits excellent electrical characteristics.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-12-15

著者

• Hsieh Tung-ling

  Department Of Materials Science And Engineering National Chiao Tung University

• Chang Chun-wei

  Department Of Industrial Education National Taiwan Normal University

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• Hsieh Tung-Ling

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan 300, Republic of China

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