Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications

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概要

• 論文の詳細を見る

• A metamorphic high-electron-mobility transistor (MHEMT) with In0.55Ga0.45As/In0.67Ga0.33As/In0.55Ga0.45As composite channel layers was developed for low-noise and high-linearity applications. The use of a composite channel results in high electron mobility and good confinement of electrons in the channel region which are the desired characteristics of low-noise and high-linearity devices. The noise figure of the $0.25 \times 160$ μm2 devices is 0.23 dB with 15.06 dB associated gain, and the output third-order intercept point (IP3) is 18.67 dBm at 6 GHz. The device shows great potential for high-linearity and low-noise applications at high frequencies.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2004-07-01

著者

• Huang Guo-wei

  National Nano Device Laboratories

• Chang Chun-yen

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity

• CHEN Guan-Ji

  Department of Materials Science and Engineering, and Microelectronics and Information Systems Resear

• BISWAS D.

  Department of Materials Science and Engineering, and Microelectronics and Information Systems Resear

• Lee Huang-ming

  Department Of Materials Science And Engineering Microelectronics And Information Systems Research Ce

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• Lin Yueh-chin

  Department Of Materials Science And Engineering National Chiao-tung University

• Chang Edward

  Department of Materials Science and Engineering, and Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Chang Chun-Yen

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Lin Yueh-Chin

  Department of Materials Science and Engineering, and Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Lee Huang-Ming

  Department of Materials Science and Engineering, and Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Biswas D.

  Department of Materials Science and Engineering, and Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Huang Guo-Wei

  National Nano Device labratories, Hsinchu 300, Taiwan, R.O.C.

• Chen Guan-Ji

  Department of Materials Science and Engineering, and Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

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