A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(<Special Section>Advances in Characterization and Measurement Technologies for Microwave and Millim

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概要

• 論文の詳細を見る

• In this work, a simple method for extracting MOSFET threshold voltage, effective channel length and channel mobility by using S-parameter measurement is presented. In the new method, the dependence between the channel conductivity and applied gate voltage of the MOSFET device is cleverly utilized to extract the threshold voltage, while biasing the drain node of the device at zero voltage during measurement. Moreover, the effective channel length and channel mobility can also be obtained with the same measurement. Furthermore, all the physical parameters can be extracted directly on the modeling devices without relying on specifically designed test devices. Most important of all, only one S-parameter measurement is required for each device under test (DUT), making the proposed extraction method promising for automatic measurement applications.

• 社団法人電子情報通信学会の論文
• 2004-05-01

著者

• Chang Chun

  Department Of Electronics Engineering National Chiao Tung University

• Chang C‐y

  Department Of Electronics Engineering National Chiao Tung University

• Huang Guo-wei

  National Nano Device Laboratories

• Huang Guo‐wei

  National Nano Device Laboratories

• Huang T‐y

  National Chiao Tung Univ. Hsinchu Twn

• CHEN Han-Yu

  Department of Electronics Engineering, National Chiao Tung University

• CHEN Kim-Ming

  National Nano Device Laboratories

• CHANG Chun-Yen

  Department of Electronics Engineering, National Chiao Tung University

• HUANG Tiao-Yuan

  Department of Electronics Engineering, National Chiao Tung University

• CHANG Chun-Yen

  National Nano Device Laboratories

• Chien C‐h

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chen Han

  Department Of Electronics Engineering National Chiao Tung University

• Chang Chun-yen

  Department Of The Electro-optical Engineering National Chiao Tung University

• CHEN Kun-Ming

  National Nano Device Laboratories

• HUANG Tiao-Yuan

  National Nano Device Laboratory

• Huang T-y

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University:national Nano Device Laboratories

• Huang Tiao-yuan

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University

• Chang Chun‐yen

  Institute Of Electronics National Chiao Tung University

• Chang Chun-yen

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity

• Huang G‐w

  National Nano Device Laboratories

• Chen Kun‐ming

  National Nano Device Laboratories

• Chang C‐y

  Department Of Electronics Engineering Nation Chiao Tung University

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