Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs

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概要

• 論文の詳細を見る

• The impacts of fluorine incorporation on the characteristics of p^+-poly-Si-gated PMOSFETs were measured before and after negative-bias-temperature-instability (NBTI) stress. Fluorine species was incorporated during S/D extension and/or deep S/D implantation using BF_2^+. A reduction in interface state density with higher F dosage is observed. Moreover, the NBTI resistance is also found to increase with increasing F incorporation, as long as the thermal budget is carefully controlled to prevent the occurrence of boron penetration phenomenon. These improvements can be ascribed to the replacement of the bonded H atoms by F ones at the Si-SiO_2 interface. However, the threshold voltage as well as oxide thickness also varies with fluorine incorporation.

• 社団法人電子情報通信学会の論文
• 2002-06-24

著者

• Huang T‐y

  National Chiao Tung Univ. Hsinchu Twn

• HUANG Tiao-Yuan

  Institute of Electronics, National Chiao Tung University

• HUANG Tiao-Yuan

  National Nano Device Laboratory

• LIN Horng-Chih

  National Nano Device Labs.

• Huang T-y

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University:national Nano Device Laboratories

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  National Nano Device Laboratories

• Lin Horng-chih

  National Nano Device Lab.

• Lee D‐y

  Institute Of Electronics National Chiao Tung University

• LU Wen-Tai

  Institute of Electronics, National Chiao-Tung University

• Lu Wen-tai

  Institute Of Electronics National Chiao Tung University

• CHIANG Wan-Ju

  Institute of Electronics, National Chiao Tung University

• LEE Da-Yuan

  Institute of Electronics, National Chiao Tung University

• Lee Da-yuan

  Institure Of Electronics National Chiao Tung University

• Chiang Wan-ju

  Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  National Chiao Tung University

• Lin Horng-Chin

  National Nano Device Laboratories

• Lu Wen-Tai

  National Nano Device Laboratories

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