The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-01-15
著者
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Lin T
United Microelectronics Corp. Hsinchu Twn
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Huang T‐y
National Chiao Tung Univ. Hsinchu Twn
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Chang Chun-yen
Institute Of Electronics National Chiao Tung University
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HUANG Tiao-Yuan
Institute of Electronics, National Chiao Tung University
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CHANG Sun-Jay
Institute of Electronics, National Chiao-Tung University
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Lee Yao-jen
Institute Of Electronics National Chiao Tung University
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Chou J‐w
United Microelectronics Corp. Technology Development Division
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Chou Jih-wen
United Microelectronics Corporation Device Engineering Department Specially Technology Division
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Yeh W‐k
National Univ. Kaohsiung Kaohsiung Twn
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Luo Wen-zheng
Institute Of Electronics National Chiao Tung University
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Chen Coming
Institute Of Electronics National Chiao Tung University
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Yeh Wen-kuan
United Microelectronics Corp. Specialty Technology Department Technogoly & Process Development D
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LIN Tony
United Microelectronics Corp., technology Development Division
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CHAO Tien-Shen
National Nano Device Labs
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