Enhanced Negative-Bias-Temperature Instability of P-Channel Metal-Oxide-Semiconductor Transistors due to Plasma Charging Damage

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-04-30

著者

• Huang T‐y

  National Chiao Tung Univ. Hsinchu Twn

• Wang T

  National Chiao Tung Univ. Hsin‐chu Twn

• HUANG Tiao-Yuan

  Institute of Electronics, National Chiao Tung University

• HUANG Tiao-Yuan

  National Nano Device Laboratory

• LIN Horng-Chih

  National Nano Device Labs.

• Huang T-y

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University:national Nano Device Laboratories

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  National Nano Device Laboratories

• Lin Horng-chih

  National Nano Device Lab.

• Lee D‐y

  Institute Of Electronics National Chiao Tung University

• Tsai Min-yu

  Institute Of Electronics National Chiao Tung University

• Wang Meng-feng

  Institute Of Electronics National Chiao Tung University

• LEE Da-Yuan

  Institute of Electronics, National Chiao Tung University

• WANG Tahui

  Institute of Electronics, National Chiao Tung University

• Lee Da-yuan

  Institure Of Electronics National Chiao Tung University

• Lin Horng-chih

  National Chiao Tung University

• Lin Horng-Chin

  National Nano Device Laboratories

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