A novel method to convert metallic-type CNTs to semiconducting-type CNT-FETs

スポンサーリンク

概要

• 論文の詳細を見る
• 2005-09-13

著者

• Huang T‐y

  National Chiao Tung Univ. Hsinchu Twn

• Chao T

  National Chiao Tung Univ. Hsinchu Twn

• Tsai Ming-jinn

  Electronics And Optoelectronics Research Laboratories (eol)

• HUANG Tiao-Yuan

  Institute of Electronics, National Chiao Tung University

• HUANG Tiao-Yuan

  National Nano Device Laboratory

• Huang T-y

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• CHEN Bae-Horng

  Electronics Research & Service Organization (ERSO), ITRI

• WEI Jeng-Hua

  Department of Electronic Engineering, Ching Yun University

• LO Po-Yuan

  Electronics Research & Service Organization (ERSO), ITRI

• CHAO Tien-Sheng

  Institute and Department of Electrophysics, National Chiao Tung University

• LIN Horng-Chih

  Institute of Electronics, National Chiao Tung University

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University:national Nano Device Laboratories

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University

• Chao T‐s

  Department Of Electrophysics National Chiao Tung University

• Chao Tien

  National Device Laboratory

• Chao Tien-sheng

  Institute And Department Of Electrophysics National Chiao Tung University

• Lin H‐c

  National Nano Device Laboratories

• Lin Horng-chih

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  Institute Of Electronics National Chiao Tung University

• Wei Jeng-hua

  Department Of Electrical Engineering National Taiwan University

• Wei Jeng-hua

  Department Of Electronic Engineering Ching Yun University

• Lo Po-yuan

  Electronics Research & Service Organization (erso) Itri

• Chen Bae-horng

  Electronics Research & Service Organization (erso) Itri

• Tsai Ming-jinn

  Electronics Research & Service Organization (erso) Itri

• Lo Po-Yuan

  Electronic Research and Service Organization (ERSO), Industrial Technology and Research Institute (ITRI), Hsinchu, 310, Taiwan, Republic of China

• Tsai Ming-Jinn

  Electronic and Opto-Electronic Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan

関連論文

• A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millim
• Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors
• Ion-Implantation Treatment(Ba, Sr)TiO_3 Thin Films
• Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications
• Rapid-Thermal-Processed BaTiO_3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition
• Characteristics of Poly-Si Nanowire Thin Film Transistors with Double-Gated Structures
• Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal-Oxide-Semiconductor Field Effect Transistors
• Impacts of LP-SiN Capping Layer and Lateral Diffusion of interface Trap on Hot Carrier Stress of NMOSFETs
• A novel method to convert metallic-type CNTs to semiconducting-type CNT-FETs
• The Effects of Dielectric Type and Thickness on the Characteristics of Dynamic Threshold Metal Oxide Semiconductor Transistors
• Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor : semiconductors
• Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
• Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
• The Combined Effects of Nitrogen Implantation at S/D Extension and N_2O Oxide on 0.18μm N- and P-Metal Oxide Field Effect Transistors (MOSEETs)
• The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
• A Radiation-Hard Flash Cell Using Horn-Shaped Floating Gate and N_2O Annealing
• A Study on the Radiation Hardness of Flash Cell with Horn-Shaped Floating-Gate
• Effects of Floating-Gate Doping Concentration of Flash Cell Performance
• The Role of a Resist During O_2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
• Characterization of Antenna Effect by Nondestructive Gate Current Measurement
• HfO_2/HfAlO/HfO_2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications
• Low Power Operation of Non-volatile Hafnium Oxide Resistive Memory
• Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
• Comprehensive HSPICE Model of Phase Change Memory Cell for Static and Transient Programming
• Characteristics Improvement of Phase Change Memory with Programming Pulse Width
• Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing
• Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition
• Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
• Improvement of Thin Oxides Thermally Grown on the Reactive-Ion-Etched Silicon Substrates
• A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN
• Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
• An Elucidation of Solid Incorporation of InGaN Grown by Metalorganic Vapor Phase Epitaxy
• Crystalline Structure Changes in GaN Films Grown at Different Temperatures
• Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition
• Improvements on Electrical Characteristics of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors with HfO_2 Gate Stacks by Post Deposition N_2O Plasma Treatment
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
• The Effects of Low-Pressure Rapid Thermal Post-Annealing on the Properties of (Ba, Sr)TiO_3 Thin Films Deposited by Liquid Source Misted Chemical Deposition : Instrumentation, Measurement, and Fabrication Technology
• Effects of Postetching Treatments on Electrical Characteristics of Thermal Oxides on Reactive-Ion-Etched Silicon Substrates
• Leakage Current Reduction of Chemical-Vapor-Deposited Ta_2O_5 Films on Rugged Polycrystalline Silicon Electrode for Dynamic Random Access Memory Application
• Low Dielectric Constant Polymer Materials as Bottom Antirefiective Coating Layers for both KrF and ArF Lithography
• Devices Characteristics and Aggravated Negative Bias Temperature Instability in PMOSFETs with Uniaxial Compressive Strain
• Low-Pressure Crystallization of Sol-Gel-Derived PbZr_Ti_O_3 Thin Films at Low Temperature for Low-Voltage Operation
• Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
• Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
• Reduction of Off-State Leakage Current in Schottky Barrier Thin-Film Transistors (SBTFT) by a Field-Induced Drain
• Enhanced Negative-Bias-Temperature Instability of P-Channel Metal-Oxide-Semiconductor Transistors due to Plasma Charging Damage
• Conduction Mechanisms for Off-State Leakage Current of Schottky Barrier Thin-Film Transistors (SBTFT)
• Post-Soft-Breakdown Characteristics of Deep Sub-Micron NMOSFETs with Ultra-Thin Gate Oxide
• Enhanced Negative-Bias-Temperature Instability of P-Channel MOSFET by Plasma Charging Damage
• The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
• Poly-Si Nanowire Thin-Film Transistors with Inverse-T Gate
• Measurement of Thin Oxide Films on Implanted Si-Substrate by Ellipsometry
• Suppression of Boron Penetration in BF^+_2-Implanted Poly-Si Gate
• Suppression of Boron Penetration in P^+-Poly-Si Gate Metal-Oxide-Semiconductor Transistor Using Nitrogen Implantation
• A Novel Shallow Trench Isolation Technique
• A Novel Shallow Trench Isolation Technique
• Mechanism and Optimization of Nitrogen Co-Implant for Suppressing Boron Penetration in P^+-Poly-Si Gate of PMOSFET's
• A Novel Planarization of Trench Isolation Using a Polysilicon Layer As a Self-Aligned Mask
• Suppression of Boron Pemetration in PMOS by Using Oxide Gettering Effect in Poly-Si Gate
• Ellipsometric Measurements and its Alignment : Using the Intensity Ratio Technique
• Improvement of Ultra-Thin 3.3 nm Thick Oxide for Co-Salicide Process Using NF_3 Annealed Poly-Gate
• Optimum Conditions for Novel One-Step Cleaning Method for Pre-Gate Oxide Cleaning Using Robust Design Methodology
• Breakdown Modes and Their Evolution in Ultrathin Gate Oxide
• Fringing Electric Field Effect on 65-nm-Node Fully Depleted Silicon-on-Insulator Devices
• High-κ Material Sidewall with Source/Drain-to-Gate Non-overlapped Structure for Low Standby Power Applications
• Improvement of Polysilicon Oxide Integrity Using NF_3-Annealing
• Characteristics of Polycrystalline Silicon Thin-Film Transistors with Electrical Source/Drain Extensions Induced by a Bottom Sub-Gate
• Impacts of SiN Deposition Conditions on NMOSFETs
• Stable Polymer Dielectric Film for Polythiophene Thin Film Transistor on Modified Poly(vinyl phenol) with Polar Functional Group
• Investigations of an Independent Double-Gated Polycrystalline Silicon Nanowire Thin Film Transistor for Nonvolatile Memory Operations
• Fourier Transform Infrared Spectroscopic Study of Oxide Films Grown in Pure N_2O
• Effect of Strain on Static and Dynamic NBTI of pMOSFETs
• Fabrication and Characterization of Schottky Barrier Polysilicon Thin-Film Transistors with Excimer-Laser Crystallized Channel
• The Improved Light-Induced Degradation and the Possible Mechanism in Deuterated Amorphous Silicon Alloy
• HfO2/HfAlO/HfO2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications
• Effects of Plasma Damage on Metal–Insulator–Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistor Technology
• Novel Method of Converting Metallic-Type Carbon Nanotubes to Semiconducting-Type Carbon Nanotube Field-Effect Transistors
• The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
• A Comprehensive Parameterized Model of Phase-Change Memory Cell for HSPICE Circuit Simulation
• Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-$k$ Blocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator Substrate
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Impacts of Low-Pressure Chemical Vapor Deposition-SiN Capping Layer and Lateral Distribution of Interface Traps on Hot-Carrier Stress of n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistors
• Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure
• Analytical Model of Subthreshold Current and Threshold Voltage for Fully Depleted Double-Gated Junctionless Transistor
• Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte
• The Role of a Resist During O2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
• Study of Carrier Transport by Pentacene Thin-Film Transistors at High Temperatures
• TiO2 Nanocrystal Prepared by Atomic-Layer-Deposition System for Non-Volatile Memory Application
• Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors
• Performance Improvement of Polycrystalline Silicon Nanowire Thin-Film Transistors by a High-$k$ Capping Layer
• Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2 Gate Stacks by Post Deposition N2O Plasma Treatment
• Characterizing the Channel Backscattering Behavior in Nanoscale Strained Complementary Metal Oxide Semiconductor Field-Effect Transistors
• Device Characteristics and Aggravated Negative Bias Temperature Instability in $ p$-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Uniaxial Compressive Strain
• A New Methodology for Probing the Electrical Properties of Heavily Phosphorous-Doped Polycrystalline Silicon Nanowires
• Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide
• Fabrication and Characterization of Schottky Barrier Polysilicon Thin-Film Transistors with Excimer-Laser Crystallized Channel
• Low-Pressure Crystallization of Sol–Gel-Derived PbZr0.52Ti0.48O3 Thin Films at Low Temperature for Low-Voltage Operation

もっと見る 閉じる

スポンサーリンク