Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide

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概要

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• Nonstoichiometric hafnium oxide (HfOx) resistive-switching memory devices with low-power operation have been demonstrated. Polycrystalline HfOx ($\text{O}:\text{Hf}=1.5:1$) films with a thickness of 20 nm are grown on a titanium nitride (TiN) bottom electrode by commercial atomic layer deposition. Platinum (Pt) as a top electrode is used in the memory device. Voltage-induced resistance switching is repeatedly observed in the Pt/HfOx/TiN/Si memory device with resistance ratio is greater than 10. During the switching cycles, the power consumptions for high- and low-resistance states are found to be 0.25 and 0.15 mW, respectively. At 85 °C, the memory device shows stable resistance switching and superior data retention with resistance ratio is greater than 100. In addition, our memory device shows little area dependence of resistance-switching behavior. The anodic electrode containing noble metal Pt serves an important role in maintaining stable resistance switching. The resistance switching in the HfOx films is thought to be due to the defects that are generated by the applied bias. The nonstoichiometric HfOx films are responsible for the low SET and RESET currents during switching. Our study shows that the HfOx resistive-switching memory is a promising candidate for next-generation nonvolatile memory device applications.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-30

著者

• Tsai Ming-jinn

  Electronics And Optoelectronics Research Laboratories (eol)

• LEE Lurng-Shehng

  Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute

• Lin Cha-hsin

  Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute

• Maikap Siddheswar

  Department And Graduate Institute Of Electrical Engineering College Of Engineering Chang Gung Univer

• Wang Ching-Chiun

  Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan

• Lee Heng-Yuan

  Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan

• Tzeng Pei-Jer

  Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan

• Tzeng Pei-Jer

  Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan

• Chen Pang-Shiu

  MingShin University of Science and Technology, Hsinfong, Hsinchu 304, Taiwan

• Wang Ching-Chiun

  Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan

• Maikap Siddheswar

  Department of Electronic Engineering, Chang Gung University, Tao-Yuan 333, Taiwan

• Lee Heng-Yuan

  Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan

• Lin Cha-Hsin

  Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan

• Lin Cha-Hsin

  Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan

• Tsai Ming-Jinn

  Electronic and Opto-Electronic Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan

• Lee Lurng-Shehng

  Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan

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