Using Spike-Anneal to Reduce Interfacial Layer Thickness and Leakage Current in Metal–Oxide–Semiconductor Devices with TaN/Atomic Layer Deposition-Grown HfAlO/Chemical Oxide/Si Structure

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概要

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• In this study, the characteristics of Ta/chemical SiO2/Si devices with their chemical oxides formed by various chemicals, including HNO3, SC1, and H2SO4+H2O2 solutions, were first investigated. We found the HNO3 split depicts the lowest leakage current and the best hysteresis behavior. Next, chemical oxide formed by HNO3 was applied to form the interfacial SiO2 layer for metal–oxide–semiconductor (MOS) devices with Ta/HfAlO/chemical SiO2/Si structrue. The effects of a high-temperature spike anneal were then studied. We found that the spike-anneal process can effectively reduce the thickness of the chemical oxide from 10 to 7 Å, thus is beneficial in preserving the low effective oxide thickness (EOT) of the structure. Furthermore, both the gate leakage current and stress-induced leakage current (SILC) were also effectively suppressed by the high-temperature spike-anneal.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• LEE Yao-Jen

  National Nano Device Laboratories

• PENG Hsin-Yi

  National Nano Device Laboratories

• TZENG Pei-Jer

  Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute

• Chang-liao Kuei-shu

  Department Of Engineering And System Science National Tsing Hua University

• Tsai Bo-an

  Department Of Engineering And System Science National Tsing Hua University

• Luo Chih-wei

  Department of Electrophysics, National Chiao-Tung University, Hsinchu 300-10, Taiwan

• Chang-Liao Kuei-Shu

  Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300-10, Taiwan

• Tzeng Pei-Jer

  Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu 300-10, Taiwan

• Tzeng Pei-Jer

  Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan

• Peng Hsin-Yi

  National Nano Device Laboratories, Hsinchu 300-78, Taiwan

• Lee Yao-Jen

  National Nano Device Laboratories, Hsinchu 300-78, Taiwan

• Tsai Bo-An

  Department of Electrophysics, National Chiao-Tung University, Hsinchu 300-10, Taiwan

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