Chang-liao Kuei-shu | Department Of Engineering And System Science National Tsing Hua University
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概要
関連著者
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Chang-liao Kuei-shu
Department Of Engineering And System Science National Tsing Hua University
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CHANG-LIAO Kuei-Shu
Department of Engineering and System Science, National Tsing Hua University
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Wang Tien-ko
Department Of Engineering And System Science National Tsing Hua University
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Chang‐liao K‐s
National Tsing Hua Univ. Hsinchu Twn
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Tzeng Pei-jer
Department Of Engineering And System Science National Tsing Hua University
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LEE Yao-Jen
National Nano Device Laboratories
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PENG Hsin-Yi
National Nano Device Laboratories
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CHENG Chin-Lung
Department of Engineering and System Science, National Tsing Hua University
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WANG Tien-Ko
Department of Engineering and System Science, National Tsing Hua University
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Tsai Bo-an
Department Of Engineering And System Science National Tsing Hua University
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Sung Chao-feng
Department Of Engineering And System Science National Tsing Hua University
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Cheng Chin-lung
Department Of Engineering And System Science National Tsing Hua University
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CHEN Chung-Hsien
Department of Engineering and System Science, National Tsing Hua University
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Lai Hsiang-yueh
Department Of Engineering And System Science National Tsing Hua University
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Chen Chung-hsien
Department Of Engineering And System Science National Tsing Hua University
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Chen Chung-Hsien
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
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Tsai Bo-An
Department of Electrophysics, National Chiao-Tung University, Hsinchu 300-10, Taiwan
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Wang T.
Department Of Orthopaedic Surgery The Affiliated Hospital Of Medical College Of Qingdao University
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TSAI Bo-An
Department of Engineering and System Science, National Tsing Hua University
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TZENG Charles
Electronics Research & Service Organization, Industrial Technology Research Institute
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LAN Tang-Yuan
Department of Nuclear Engineering and Engineering Physics, National Tsing Hua University
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Lan Tang-yuan
Department Of Nuclear Engineering And Engineering Physics National Tsing Hua University
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TZENG Pei-Jer
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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Tzeng P‐j
National Tsing Hua Univ. Hsinchu Twn
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Huang S.
Physics Division Institution Of Nuclear Energy Research
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Tzeng Charles
Electronics Research & Service Organization Industrial Technology Research Institute
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HUANG Ching-Hung
Department of Engineering and System Science, National Tsing Hua University
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WANG Ping-Liang
Department of Engineering and System Science, National Tsing Hua University
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Wu Bone-fung
Department Of Engineering And System Science National Tsing Hua University
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KAO H.
Department of Chemistry, Tamkang University
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LAI Hsiang-Yueh
Department of Engineering and System Science, National Tsing Hua University
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SUNG Chao-Feng
Department of Engineering and System Science, National Tsing Hua University
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Huang Ching-hung
Department Of Engineering And System Science National Tsing Hua University
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Chang-liao Kuei-shu
Department Of Nuclear Engineering And Engineering Physics National Tsing Hua University
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Wu Tai-liang
Department Of Nuclear Engineering And Engineering Physics National Tsing Hua University
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Wang Ping-liang
Department Of Engineering And System Science National Tsing Hua University
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CHEN Ling-Chih
Department of Nuclear Engineering and Engineering Physics, National Tsing Hua University
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TSAI Ping-Hung
Department of Engineering and System Science, National Tsing Hua University
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TSAI W.
Physics Division, Institution of Nuclear Energy Research
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AI C.
Physics Division, Institution of Nuclear Energy Research
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Tsai Ping-hung
Department Of Engineering And System Science National Tsing Hua University
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CHANG Huang-Ming
Department of Engineering and System Science, National Tsing Hua University
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Chen Ling-chih
Department Of Nuclear Engineering And Engineering Physics National Tsing Hua University
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Kao H.
Department Of Chemistry Tamkang University
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Kao H.
Department Of Engineering And System Science National Tsing Hua University
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Tsai W.
Physics Division Institution Of Nuclear Energy Research
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Wang T.
Department Of Chemistry Soochow University
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Chang Huang-ming
Department Of Engineering And System Science National Tsing Hua University
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Wang T.
Department Of Engineering And System Science National Tsing Hua University
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Luo Chih-wei
Department of Electrophysics, National Chiao-Tung University, Hsinchu 300-10, Taiwan
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Chang-Liao Kuei-Shu
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300-10, Taiwan
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Tzeng Pei-Jer
Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu 300-10, Taiwan
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Tzeng Pei-Jer
Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan
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Peng Hsin-Yi
National Nano Device Laboratories, Hsinchu 300-78, Taiwan
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Lee Yao-Jen
National Nano Device Laboratories, Hsinchu 300-78, Taiwan
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Sung Chao-Feng
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, R.O.C.
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Wang Tien-Ko
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, R.O.C.
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Liao Kuei-Shu
Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
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Lai Hsiang-Yueh
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, R.O.C.
著作論文
- Reduced Interfacial Layer Thickness and Gate Leakage Current of ALD Grown HfAlO with TaN Gates using Chemical Oxides and Spike-Annealing
- Improvement of Hot-Electron Hardness in Metal-Oxide-Semiconductor Devices by Combination of Gate Electrode Deposited Using Amorphous Si and Gate Oxide Grown in N_2O
- Effects of HfO_xN_y Gate-Dielectric Nitrogen Concentration on the Charge Trapping Properties of Metal-Oxide-Semiconductor Devices
- Physical and Reliability Characteristics of Metal-Oxide-Semiconductor Devices with HfO_xN_y Gate Dielectrics on Different Surface-Oriented Substrates
- Suppression of Plasma Charging Damage in Sub-Micron Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with Gate Oxynitride by Two-Step Nitridation : Semiconductors
- Reduction of Plasma Etching Induced Electrical Degradation in Metal-Oxide-Si Capacitors by Furnace Grown Oxides Rapid Thermal Annealed in N_2O
- Operation Characterization of Flash Memory with Silicon Nitride/Silicon Dioxide Stack Tunnel Dielectric
- Effects of Arsenic Concentration in Gate Oxide on Electrical Properties of Metal-Oxide-Si Capacitors
- Radiation Dosimeters for High Dose by Commercial PMOS Transistors Using Normalized Drain Current as Dosimetric Parameter
- Metal-Oxide-Si Capacitors Hot-Electron and Radiation Hardness Improvement by Gate Electrodes Deposited Using Amorphous Si and Gate Oxides Rapid Thermal Annealed in N_20
- Improved Blocking Voltage in Diode with Neutron-Transmutation-Doped Silicon by Field Oxide Annealed in N2O
- Electrical characteristic improvement of high-k gated MOS device by nitridation treatment using plasma immersion ion implantation (PIII)
- Reduction of Plasma Etching Induced Electrical Degradation in Metal-Oxide-Si Capacitors by Furnace Grown Oxides Rapid Thermal Annealed in N_2O
- Extraction Method of Threshold Voltage and Transconductance to Assess Radiation Effects on MOS Circuits
- Using Spike-Anneal to Reduce Interfacial Layer Thickness and Leakage Current in Metal–Oxide–Semiconductor Devices with TaN/Atomic Layer Deposition-Grown HfAlO/Chemical Oxide/Si Structure
- Operation Characterization of Flash Memory with Silicon Nitride/Silicon Dioxide Stack Tunnel Dielectric