Tsai Bo-An | Department of Electrophysics, National Chiao-Tung University, Hsinchu 300-10, Taiwan

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概要

• Tsai Bo-Anの詳細を見る
• 同名の論文著者
• Department of Electrophysics, National Chiao-Tung University, Hsinchu 300-10, Taiwanの論文著者

関連著者

• LEE Yao-Jen

  National Nano Device Laboratories

• PENG Hsin-Yi

  National Nano Device Laboratories

• Chang-liao Kuei-shu

  Department Of Engineering And System Science National Tsing Hua University

• Tsai Bo-an

  Department Of Engineering And System Science National Tsing Hua University

• Tsai Bo-An

  Department of Electrophysics, National Chiao-Tung University, Hsinchu 300-10, Taiwan

• TSAI Bo-An

  Department of Engineering and System Science, National Tsing Hua University

• TZENG Charles

  Electronics Research & Service Organization, Industrial Technology Research Institute

• CHANG-LIAO Kuei-Shu

  Department of Engineering and System Science, National Tsing Hua University

• TZENG Pei-Jer

  Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute

• Tzeng Charles

  Electronics Research & Service Organization Industrial Technology Research Institute

• Luo Chih-wei

  Department of Electrophysics, National Chiao-Tung University, Hsinchu 300-10, Taiwan

• Chang-Liao Kuei-Shu

  Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300-10, Taiwan

• Tzeng Pei-Jer

  Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu 300-10, Taiwan

• Tzeng Pei-Jer

  Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan

• Peng Hsin-Yi

  National Nano Device Laboratories, Hsinchu 300-78, Taiwan

• Lee Yao-Jen

  National Nano Device Laboratories, Hsinchu 300-78, Taiwan

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著作論文

• Reduced Interfacial Layer Thickness and Gate Leakage Current of ALD Grown HfAlO with TaN Gates using Chemical Oxides and Spike-Annealing
• Using Spike-Anneal to Reduce Interfacial Layer Thickness and Leakage Current in Metal–Oxide–Semiconductor Devices with TaN/Atomic Layer Deposition-Grown HfAlO/Chemical Oxide/Si Structure

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