Peng Hsin-Yi | National Nano Device Laboratories, Hsinchu 300-78, Taiwan

スポンサーリンク

概要

関連著者

LEE Yao-Jen
National Nano Device Laboratories
PENG Hsin-Yi
National Nano Device Laboratories
TZENG Pei-Jer
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
Chang-liao Kuei-shu
Department Of Engineering And System Science National Tsing Hua University
Tsai Bo-an
Department Of Engineering And System Science National Tsing Hua University
Luo Chih-wei
Department of Electrophysics, National Chiao-Tung University, Hsinchu 300-10, Taiwan
Chang-Liao Kuei-Shu
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300-10, Taiwan
Tzeng Pei-Jer
Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu 300-10, Taiwan
Tzeng Pei-Jer
Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan
Peng Hsin-Yi
National Nano Device Laboratories, Hsinchu 300-78, Taiwan
Lee Yao-Jen
National Nano Device Laboratories, Hsinchu 300-78, Taiwan
Tsai Bo-An
Department of Electrophysics, National Chiao-Tung University, Hsinchu 300-10, Taiwan

もっと見る

著作論文

Using Spike-Anneal to Reduce Interfacial Layer Thickness and Leakage Current in Metal–Oxide–Semiconductor Devices with TaN/Atomic Layer Deposition-Grown HfAlO/Chemical Oxide/Si Structure

スポンサーリンク