Reduced Interfacial Layer Thickness and Gate Leakage Current of ALD Grown HfAlO with TaN Gates using Chemical Oxides and Spike-Annealing

スポンサーリンク

概要

• 論文の詳細を見る
• 2007-09-19

著者

• LEE Yao-Jen

  National Nano Device Laboratories

• TSAI Bo-An

  Department of Engineering and System Science, National Tsing Hua University

• PENG Hsin-Yi

  National Nano Device Laboratories

• TZENG Charles

  Electronics Research & Service Organization, Industrial Technology Research Institute

• CHANG-LIAO Kuei-Shu

  Department of Engineering and System Science, National Tsing Hua University

• Chang-liao Kuei-shu

  Department Of Engineering And System Science National Tsing Hua University

• Tzeng Charles

  Electronics Research & Service Organization Industrial Technology Research Institute

• Tsai Bo-an

  Department Of Engineering And System Science National Tsing Hua University

• Tsai Bo-An

  Department of Electrophysics, National Chiao-Tung University, Hsinchu 300-10, Taiwan

関連論文

• Reduced Interfacial Layer Thickness and Gate Leakage Current of ALD Grown HfAlO with TaN Gates using Chemical Oxides and Spike-Annealing
• Improvement of Hot-Electron Hardness in Metal-Oxide-Semiconductor Devices by Combination of Gate Electrode Deposited Using Amorphous Si and Gate Oxide Grown in N_2O
• High-Performance LTPS-TFTs Fabricated by Continuous Wave Laser Annealing
• Characteristics of Poly-Si Nanowire Thin Film Transistors with Double-Gated Structures
• Impacts of LP-SiN Capping Layer and Lateral Diffusion of interface Trap on Hot Carrier Stress of NMOSFETs
• Local Strained Channel nMOSFETs by Different Poly-Si Gate and SiN Capping Layer Thicknesses : Mobility, Simulation, Size Dependence, and Hot Carrier Stress
• Characterizing Optical Constants of Thin Films for Vacuum Ultraviolet Lithography Applications
• Effects of HfO_xN_y Gate-Dielectric Nitrogen Concentration on the Charge Trapping Properties of Metal-Oxide-Semiconductor Devices
• Physical and Reliability Characteristics of Metal-Oxide-Semiconductor Devices with HfO_xN_y Gate Dielectrics on Different Surface-Oriented Substrates
• Suppression of Plasma Charging Damage in Sub-Micron Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with Gate Oxynitride by Two-Step Nitridation : Semiconductors
• Reduction of Plasma Etching Induced Electrical Degradation in Metal-Oxide-Si Capacitors by Furnace Grown Oxides Rapid Thermal Annealed in N_2O
• Optical Design of Bent Rib Waveguide with MOS Cross-Section
• Operation Characterization of Flash Memory with Silicon Nitride/Silicon Dioxide Stack Tunnel Dielectric
• Effects of Arsenic Concentration in Gate Oxide on Electrical Properties of Metal-Oxide-Si Capacitors
• Radiation Dosimeters for High Dose by Commercial PMOS Transistors Using Normalized Drain Current as Dosimetric Parameter
• Metal-Oxide-Si Capacitors Hot-Electron and Radiation Hardness Improvement by Gate Electrodes Deposited Using Amorphous Si and Gate Oxides Rapid Thermal Annealed in N_20
• Improved Blocking Voltage in Diode with Neutron-Transmutation-Doped Silicon by Field Oxide Annealed in N2O
• Electrical characteristic improvement of high-k gated MOS device by nitridation treatment using plasma immersion ion implantation (PIII)
• Reduction of Plasma Etching Induced Electrical Degradation in Metal-Oxide-Si Capacitors by Furnace Grown Oxides Rapid Thermal Annealed in N_2O
• Extraction Method of Threshold Voltage and Transconductance to Assess Radiation Effects on MOS Circuits
• Effects of Plasma Damage on Metal–Insulator–Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistor Technology
• Impacts of Low-Pressure Chemical Vapor Deposition-SiN Capping Layer and Lateral Distribution of Interface Traps on Hot-Carrier Stress of n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistors
• Performance Enhancement by Local Strain in $\langle 110\rangle$ Channel n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (111) Substrate
• Using Spike-Anneal to Reduce Interfacial Layer Thickness and Leakage Current in Metal–Oxide–Semiconductor Devices with TaN/Atomic Layer Deposition-Grown HfAlO/Chemical Oxide/Si Structure
• Crystal Orientation and Nitrogen Effects on the Carrier Mobility of p-Type Metal Oxide Semiconductor Field Effect Transistor with Ultra Thin Gate Dielectrics
• Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode
• Operation Characterization of Flash Memory with Silicon Nitride/Silicon Dioxide Stack Tunnel Dielectric

もっと見る 閉じる

スポンサーリンク