Effects of Plasma Damage on Metal–Insulator–Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistor Technology

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概要

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• The effects of damage on mixed-signal (MS)/radio-frequency (RF) circuits integrated with metal–insulator–metal (MIM) capacitors and advanced metal–oxide–semiconductor field-effect transistors (MOSFETs) are studied in this work. The impact of damage on an MIM oxide is evaluated by connecting its capacitor top metal (CTM) to an upper-level metal with a large antenna ratio ($\mathrm{AR}_{\text{CTM}}$) used in an actual CTM circuit connected to an interconnect. In addition to the dielectric degradation of a transistor, we also investigate the damage-enhanced negative bias temperature instability (NBTI) degradation of a transistor with its gate electrode connected to an MIM capacitor with a large $\mathrm{AR}_{\text{CTM}}$ for various gate oxide thicknesses. A model is proposed to explain the experimentally observed dependence of NBTI degradation on $\mathrm{AR}_{\text{CTM}}$ and accurately simulate failure distributions in the presence of plasma damage.

• 2009-08-25

著者

• LEE Yao-Jen

  National Nano Device Laboratories

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University

• Lin Hong-Chih

  Institute of Electronics, National Chiao Tung University, 1001, Ta-Hsueh Rd., Hsinchu 300, Taiwan

• Huang Tiao-Yuan

  Institute of Electronics, National Chiao Tung University, 1001, Ta-Hsueh Rd., Hsinchu 300, Taiwan

• Weng Wu-Te

  Institute of Electronics, National Chiao Tung University, 1001, Ta-Hsueh Rd., Hsinchu 300, Taiwan

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