Performance Enhancement by Local Strain in $\langle 110\rangle$ Channel n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (111) Substrate

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概要

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• In this study, an n-channel metal–oxide–semiconductor field-effect transistor (nMOSFET) fabricated with local strained channel techniques on a (111) Si substrate using a SiN capping layer with high mechanical stress and the stack gate of amorphous silicon ($\alpha$-Si) and polycrystalline silicon (poly-Si) was investigated. By using these techniques, the performance improvement of the nMOSFETs in the $\langle 110\rangle$ channel direction on the (111) substrate was achieved. The on-current and transconductance ($G_{\text{m}}$) increased with increasing SiN capping layer or $\alpha$-Si layer thickness. Our experimental results show that devices with a 700 Å $\alpha$-Si layer show a 6.7% on-current improvement percentage relative to those with a 200 Å $\alpha$-Si layer, and a corresponding $G_{\text{m}}$ improvement percentage of 10.2%. In addition, charge pumping current/interface state density decreased for the samples with a thicker SiN layer.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-09-15

著者

• LEE Yao-Jen

  National Nano Device Laboratories

• Chao Tien-sheng

  Department Of Electrophysics National Chiao Tung University

• Chang Chun-yen

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity

• Lo Wen-cheng

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chang Chun-Yen

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan

• Kuo Ya-Hsin

  Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan

• Lee Yao-Jen

  National Nano Device Labs, Hsinchu 300, Taiwan

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