Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode

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概要

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• Resistive-switching (RS) modes in different CMOS-compatible binary oxides have been shown to be governed by the interplay with the Ni top electrode. Unipolar RS and metallic low-resistance state in polycrystalline HfO<inf>2</inf>and ZrO<inf>2</inf>are distinct from the preferential bipolar RS and semiconductive low-resistance state in amorphous Al<inf>2</inf>O<inf>3</inf>and SiO<inf>2</inf>. Backside secondary ion mass spectrometry (SIMS) has shown the formation of Ni filaments in HfO<inf>2</inf>, in contrast to the formation of oxygen-vacancy filaments in Al<inf>2</inf>O<inf>3</inf>. The differences have been explained by strong dependence of Ni migration on the oxide crystallinity. Additionally, the RS mode can be further tailored using bilayer structures. The oxide layer next to the Si bottom electrode and its tendency of forming Ni filaments play significant roles in unipolar RS in the bilayer structures, in support of the conical-shape Ni filament model where the connecting and rupture of filaments for unipolar RS occur at the smallest diameter near the bottom electrodes.

• 2013-03-25

著者

• LEE Yao-Jen

  National Nano Device Laboratories

• LIN Chen-Hsi

  Winbond Electronics Corp.

• Lei Tan-fu

  Department Of Electronic Engineering National Chiao Tung University

• Lin Kuan-liang

  Department Of Materials Science And Engineering National Cheng-kung University

• Hou Tuo-Hung

  Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 30010, Taiwan

• Chou Cheng-Tung

  Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan

• Chang Jhe-Wei

  Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan

• Lin Jun-Hung

  Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan

• Shieh Jiann

  Department of Materials Science and Engineering, National United University, Miaoli 360, Taiwan

• Chang Wen-Hsiung

  Winbond Electronics Corporation, Taichung 428, Taiwan

• Jang Wen-Yueh

  Winbond Electronics Corporation, Taichung 428, Taiwan

• Hou Tuo-Hung

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan

• Lin Kuan-Liang

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan

• Lei Tan-Fu

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan

• Lin Chen-Hsi

  Winbond Electronics Corporation, Taichung 428, Taiwan

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