Chang Wen-Hsiung | Winbond Electronics Corporation, Taichung 428, Taiwan
スポンサーリンク
概要
関連著者
-
LIN Chen-Hsi
Winbond Electronics Corp.
-
Chang Wen-Hsiung
Winbond Electronics Corporation, Taichung 428, Taiwan
-
Jang Wen-Yueh
Winbond Electronics Corporation, Taichung 428, Taiwan
-
Hou Tuo-Hung
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
-
LEE Yao-Jen
National Nano Device Laboratories
-
Lei Tan-fu
Department Of Electronic Engineering National Chiao Tung University
-
Lin Kuan-liang
Department Of Materials Science And Engineering National Cheng-kung University
-
Hou Tuo-Hung
Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 30010, Taiwan
-
Chou Cheng-Tung
Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan
-
Chang Jhe-Wei
Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan
-
Lin Jun-Hung
Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan
-
Shieh Jiann
Department of Materials Science and Engineering, National United University, Miaoli 360, Taiwan
-
Lin Kuan-Liang
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
-
Lei Tan-Fu
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
-
Huang Jiun-Jia
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
-
Hsu Chung-Wei
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
-
Tseng Yi-Ming
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
-
Lin Chen-Hsi
Winbond Electronics Corporation, Taichung 428, Taiwan
著作論文
- Flexible One Diode-One Resistor Crossbar Resistive-Switching Memory (Special Issue : Solid State Devices and Materials (2))
- Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode