Jang Wen-Yueh | Winbond Electronics Corporation, Taichung 428, Taiwan
スポンサーリンク
概要
関連著者
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LIN Chen-Hsi
Winbond Electronics Corp.
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Chang Wen-Hsiung
Winbond Electronics Corporation, Taichung 428, Taiwan
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Jang Wen-Yueh
Winbond Electronics Corporation, Taichung 428, Taiwan
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Hou Tuo-Hung
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
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LEE Yao-Jen
National Nano Device Laboratories
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Lei Tan-fu
Department Of Electronic Engineering National Chiao Tung University
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Lin Kuan-liang
Department Of Materials Science And Engineering National Cheng-kung University
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Hou Tuo-Hung
Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 30010, Taiwan
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Chou Cheng-Tung
Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan
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Chang Jhe-Wei
Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan
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Lin Jun-Hung
Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan
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Shieh Jiann
Department of Materials Science and Engineering, National United University, Miaoli 360, Taiwan
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Lin Kuan-Liang
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
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Lei Tan-Fu
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
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Huang Jiun-Jia
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
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Hsu Chung-Wei
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
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Tseng Yi-Ming
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
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Lin Chen-Hsi
Winbond Electronics Corporation, Taichung 428, Taiwan
著作論文
- Flexible One Diode-One Resistor Crossbar Resistive-Switching Memory (Special Issue : Solid State Devices and Materials (2))
- Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode