Crystal Orientation and Nitrogen Effects on the Carrier Mobility of p-Type Metal Oxide Semiconductor Field Effect Transistor with Ultra Thin Gate Dielectrics
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概要
- 論文の詳細を見る
In this study, nitrogen dosage effects on p-type metal oxide semiconductor field effect transistors (pMOSFETs) with ultra thin gate dielectric on Si(100) and Si(111) were investigated. pMOSFETs on Si(111) show a 64% improvement of transconductance over their on Si(100) counterparts. We found that the incorporation of nitrogen enhances the transconductance on Si(100), but degrades that on Si(111). In addition, compared to Si(100), pMOSFETs on Si(111) show a strong dependence with the aspect ratio effect due to the two-dimensional strain effect.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-03-15
著者
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LEE Yao-Jen
National Nano Device Laboratories
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Huang Tiao-yuan
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University
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Chao Tien-sheng
Department Of Electrophysics National Chiao Tung University
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Yang Wen-luh
Department Of Electronic Engineering Feng Chia University
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Yang Wen-Luh
Department of Electronic Engineering, Feng Chia University, Taichung, 407-24, Taiwan
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Ho Pei-Tsang
Department of Electronic Engineering, Feng Chia University, Taichung, 407-24, Taiwan
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Chao Tien-Sheng
Department of Electrophysics, National Chiao Tung University, Hsinchu, 300-78, Taiwan
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Huang Tiao-Yuan
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300-78, Taiwan
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Lee Yao-Jen
National Nano Device Laboratories, Hsinchu, 300-78, Taiwan
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