Robust Data Retention and Superior Endurance of Silicon-Oxide-Nitride-Oxide-Silicon-Type Nonvolatile Memory with NH-Plasma-Treated and Pd-Nanocrystal-Embedded Charge Storage Layer (Special Issue : Solid State Devices and Materials (2))
スポンサーリンク
概要
著者
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Chao Tien-sheng
Department Of Electrophysics National Chiao Tung University
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Hsiao Yu-ping
Department Of Dermatology Chung Shan Medical University Hospital
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Yang Wen-luh
Department Of Electronic Engineering Feng Chia University
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Liu Sheng-Hsien
Ph. D. Program in Electrical and Communications Engineering, Feng Chia University, Taichung 407, Taiwan
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