Suppression of Boron Penetration in P+-Poly-SiGe Gate P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using NH3-Nitrided and N2O-Grown Gate Oxides
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概要
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High-performance p+-poly-SiGe-gate p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) have been fabricated using NH3-nitrided or N2O-grown oxide instead of the conventional O2-grown oxide. It is found that NH3-nitrided or N2O-grown oxide can suppress boron penetration in the p+-poly-SiGe gate, which improves the integrity of gate dielectrics, resulting in a low flat-band voltage shift, subthreshold swing, and drain-induced barrier lowering.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-11-15
著者
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Chao Tien-sheng
Department Of Electrophysics National Chiao Tung University
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Yang Wen-luh
Department Of Electronic Engineering Feng Chia University
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Lai Kuan-Hung
Department of Electronic Engineering, Feng Chia University, Taichung 407, Taiwan, R.O.C.
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Chao Tien-Sheng
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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- Suppression of Boron Penetration in P+-Poly-SiGe Gate P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using NH3-Nitrided and N2O-Grown Gate Oxides