The Effects of Dielectric Type and Thickness on the Characteristics of Dynamic Threshold Metal Oxide Semiconductor Transistors

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概要

• 論文の詳細を見る

• In this paper, we discuss dynamic threshold MOS (DTMOS) operations for nMOSFETs of different dielectric types and thicknesses. We found that, under the DT mode of operation, all devices exhibit a threshold voltage close to 0.7 V, independent of the thickness and gate dielectric type of the device. This is due to the diminished influence of the body effect factor. Formulations of threshold voltage and subthreshold swing of DTMOS are developed to gain insights into this unique phenomenon, and simulation of the subthreshold swing is also provided.

• 2003-09-15

著者

• Lee Yao-jen

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Huang Tiao-yuan

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University

• Chao Tien-sheng

  Department Of Electrophysics National Chiao Tung University

• Chao Tien-Sheng

  Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan

• Huang Tiao-Yuan

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan

• Lee Yao-Jen

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan

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