Novel Method of Converting Metallic-Type Carbon Nanotubes to Semiconducting-Type Carbon Nanotube Field-Effect Transistors

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概要

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• Depending on the chirality, single-walled carbon nanotubes (SWNTs) can be either metallic or semiconducting. Thus far, the production of SWNTs, irrespective of synthesis methods, still yields a mixture of both types, with the metallic type being prevalent. However, semiconducting-type SWNTs are needed for carbon nanotube field-effect transistors (CNT-FETs) as well as many sensors. This is because only the semiconducting-type SWNTs can be effectively modulated by the gate voltage. In contrast, the lack of field effect in metallic-type SWNTs adversely impacts their applications in high-performance electronic devices. In this study, we demonstrate for the first time a novel plasma treatment method that allows us to convert metallic-type carbon nanotubes to semiconducting-type CNT-FETs. On the basis of our experimental results, we believe that the ion bombardment during Ar plasma treatment attacks both metallic- and semiconducting-type nanotubes; however, the metallic-type carbon nanotubes are more vulnerable to the attack than those of the semiconducting type, and are subsequently transformed into the latter type.

• 2006-04-30

著者

• CHEN Bae-Horng

  Electronics Research & Service Organization (ERSO), ITRI

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University

• Chao Tien-sheng

  Department Of Electrophysics National Chiao Tung University

• Lin Horng-chih

  Institute Of Electronics National Chiao Tung University

• Wei Jeng-hua

  Department Of Electrical Engineering National Taiwan University

• Lo Po-Yuan

  Electronic Research and Service Organization (ERSO), Industrial Technology and Research Institute (ITRI), Hsinchu, 310, Taiwan, Republic of China

• Pei Zing-Way

  Electronic Research and Service Organization (ERSO), Industrial Technology and Research Institute (ITRI), Hsinchu, 310, Taiwan, Republic of China

• Huang Tiao-Yuan

  Institute of Electronics, National Chiao Tung University, Hsinchu, 300, Taiwan

• Lo Po-Yuan

  Electronics Research and Service Organization (ERSO), ITRI, Hsinchu, 300, Taiwan

• Chao Tien-Sheng

  Department of Electrophysics, National Chiao Tung University, Hsinchu, 300, Taiwan

• Lin Horng-Chih

  Institute of Electronics, National Chiao Tung University, Hsinchu, 300, Taiwan

• Chen Bae-Horng

  Electronics Research and Service Organization (ERSO), ITRI, Hsinchu, 300, Taiwan

• Wei Jeng-Hua

  Department of Electronic Engineering, Ching Yun University, Jung-Li, 229, Taiwan

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