Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor : semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-06-01
著者
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Huang T‐y
National Chiao Tung Univ. Hsinchu Twn
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SZE Simon
National Nano Device Laboratory
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HUANG Tiao-Yuan
National Nano Device Laboratory
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LIN Horng-Chih
National Nano Device Labs.
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Huang T-y
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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WANG Meng-Fan
Institute of Electronics, National Chiao-Tung Universiry
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HOU Fu-Ju
National Nano Device Laboratories
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LIU Jan-Tsai
National Nano Device Laboratories
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Huang Tiao-yuan
Institute Of Electronics National Chiao Tung University:national Nano Device Laboratories
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Lin H‐c
National Nano Device Laboratories
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Lin Horng-chih
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Lin Horng-chih
Institute Of Electronics National Chiao Tung University
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Lin Horng-chih
National Nano Device Lab.
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Wang M‐f
Institute Of Electronics National Chiao-tung Universiry
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Sze Simon
National Nano Device Laboratories
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Wang Meng-fan
Institute Of Electronics National Chiao-tung Universiry
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Wang Meng-feng
Institute Of Electronics National Chiao Tung University
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Liu J‐t
National Nano Device Laboratories
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Huang Tiao-yuan
National Chiao Tung University
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Lin Horng-chih
National Chiao Tung University
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