The Role of a Resist During O_2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-07-01

著者

• Huang T‐y

  National Chiao Tung Univ. Hsinchu Twn

• Chien C‐h

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chang Chun-yen

  Institute Of Electronics National Chiao Tung University

• HUANG Tiao-Yuan

  Institute of Electronics, National Chiao Tung University

• LIN Horng-Chih

  National Nano Device Labs.

• Huang T-y

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• CHIEN Chao-Hsin

  Institute of Electronics, National Chiao-Tung University

• CHANG Tsai-Fu

  Institute of Electronics, National Chiao Tung University

• HSIEN Szu-Kang

  Institute of Electronics, National Chiao Tung University

• TSENG Hua-Chou

  Institute of Electronics, National Chiao Tung University

• CHIOU Shean-Guang

  National Nano Device Laboratories

• Lin Horng-chih

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chang Tsai-fu

  Institute Of Electronics National Chiao Tung University

• Hsien Szu-kang

  Institute Of Electronics National Chiao Tung University

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