Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-10-15

著者

• Sze S‐m

  National Nano Device Lab. Hsinchu Twn

• Huang T‐y

  National Chiao Tung Univ. Hsinchu Twn

• CHAN Shih-Hsiung

  National Nano Device Laboratories

• Leu C‐c

  National Nano Device Lab. Hsin‐chu Twn

• Chan S‐h

  Advanced Epitaxy Technol. Inc. Hsinchu Twn

• LEE Ming-Kwei

  Department of Electrical Engineering, National Sun Yat-sen University

• Chan Shih-hsiung

  Department Of Electrical Engineering National Cheng Kung University

• HORNG Ray-Hua

  Institute of Precision Engineering, National Chung Hsing University

• LEU Ching-Chich

  National Nano Device Laboratory

• SZE Simon

  National Nano Device Laboratory

• WUU Dong-Sing

  Institute of Electrical Engineering, Da-Yeh University

• LEE Ming-Kwei

  Institute of Electrical Engineering, National Sun Yat-Sen University

• WU Luh-Huei

  Institute of electrical engineering, Da-Yeh University

• HUANG Tiao-Yuan

  National Nano Device Laboratory

• Sze S

  National Chiao‐tung Univ. Hsinchu Twn

• Wu Long-hai

  Department Of Applied Chemistry National Chiao Tung University

• Huang T-y

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University:national Nano Device Laboratories

• Sze Simon

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University:na

• Sze Simon-m.

  National Nano Device Laboratory

• Sze Simon

  National Nano Device Laboratories

• Horng R‐h

  National Chung Hsing Univ. Taichung Twn

• Lee M‐k

  National Sun Yat‐sen Univ. Kaohsiung Twn

• Horng Ray-hua

  Institute Of Precision Egineering National Chung Hsing University

• Sze S

  National Nano Device Lab. Hsin‐chu Twn

• Wu Luh-huei

  Department Of Applied Chemistry National Chiao Tung University

• Wuu D‐s

  National Chung Hsing Univ. Taichung Twn

• Huang Tiao-yuan

  National Chiao Tung University

• Leu Ching-chich

  National Nano Device Laboratories

• Wuu Dong-sing

  Institute Of Electrical Engineering Da-yeh University

• Horng Ray-Hua

  Institute of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan, ROC

関連論文

• A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millim
• Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
• Characterization of Thermally Annealed Fluorinated Silicon Dioxide Films Prepared by Liquid-Phase Deposition
• Properties of TiO_2 Thin Films on InP Substrate Prepared by Liquid Phase Deposition : Short Note
• Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium-Tin-Oxide/Al Mirror (Special Issue: Solid State Devices & Materials)
• Improvements in for N-Side-Up GaN/Mirror/Si LEDs Using High Reflective Ohmic Contacts
• Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes
• Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
• Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
• Improvement in GaN-based light-emitting diodes by surface texturization with natural lithography
• GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
• Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
• High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating
• Ion-Implantation Treatment(Ba, Sr)TiO_3 Thin Films
• Etching Characteristics and Mechanism of Ba_Sr_TiO_3 Thin Films in an Inductively Coupled Plasma
• Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications
• Rapid-Thermal-Processed BaTiO_3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition
• Characterization of Thin-Film Electroluminescent Devices with Multiple Ta_2O_5 Interlayers Incorporated into SrS:Pr,Ce Phosphor
• Characteristics of Poly-Si Nanowire Thin Film Transistors with Double-Gated Structures
• Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal-Oxide-Semiconductor Field Effect Transistors
• Preparation of Niobium-Doped Titanium Oxide Film by Liquid Phase Deposition
• Impacts of LP-SiN Capping Layer and Lateral Diffusion of interface Trap on Hot Carrier Stress of NMOSFETs
• A novel method to convert metallic-type CNTs to semiconducting-type CNT-FETs
• The Effects of Dielectric Type and Thickness on the Characteristics of Dynamic Threshold Metal Oxide Semiconductor Transistors
• Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor : semiconductors
• Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
• Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
• The Combined Effects of Nitrogen Implantation at S/D Extension and N_2O Oxide on 0.18μm N- and P-Metal Oxide Field Effect Transistors (MOSEETs)
• The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
• A Radiation-Hard Flash Cell Using Horn-Shaped Floating Gate and N_2O Annealing
• A Study on the Radiation Hardness of Flash Cell with Horn-Shaped Floating-Gate
• Effects of Floating-Gate Doping Concentration of Flash Cell Performance
• The Role of a Resist During O_2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
• Characterization of Antenna Effect by Nondestructive Gate Current Measurement
• Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures
• Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection
• Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_ Heterojunction Bipolar Transistors under High-Level Injection
• Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
• Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Photo-Induced Liquid Crystal Alignment with Discotic Films
• Obliquely Tilted Discotic Phase Compensation Films
• Characterization of Titanium Oxide Films Prepared by LIquid Phase Deposition Using Hexafluorotitanic Acid
• The Protrusion of Liquid Phase Oxide Deposition on Patterned Silicon Wafer with Silicon Nitride as Mask
• Improvements on Electrical Characteristics of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors with HfO_2 Gate Stacks by Post Deposition N_2O Plasma Treatment
• Effectiveness of NH_3 Plasma Treatment in Preventing Wet Stripper Damage to Low-K Hydrogen Silsesquioxane (HSQ) : Semiconductors
• Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of LOW-k Hydrogen Silisesquioxane
• Enhancement of Barrier Properties in Chemical Vapor Deposited TiN Employing Multi-Stacked Ti/TiN Structure
• Effectively Blocking Copper Diffusion at Low-k Hydrogen Silsesquioxane/Copper Interface
• Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H_2 Plasma Treatment
• Thinning Technology for Lithium Niobate Wafer by Surface Activated Bonding and Chemical Mechanical Polishing (Special Issue: Solid State Devices & Materials)
• Optical and Electrical Characteristics of CO_2-Laser-Treated Mg-Doped GaN Film
• Electrical Properties of Multiple High-Dose Si Implantation in p-GaN
• Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition
• Back-Gating Effects on the Ga_In_P/InP/InGaAs High-Electron-Mobility Transistor
• Influence of Metalorganic Sources on the Composition Uniformity of Selectively Grown Ga_XIn_P
• Cation Source Dependence of Ga_In_P Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
• The Effects of Low-Pressure Rapid Thermal Post-Annealing on the Properties of (Ba, Sr)TiO_3 Thin Films Deposited by Liquid Source Misted Chemical Deposition : Instrumentation, Measurement, and Fabrication Technology
• Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
• Low Dielectric Constant Polymer Materials as Bottom Antirefiective Coating Layers for both KrF and ArF Lithography
• Devices Characteristics and Aggravated Negative Bias Temperature Instability in PMOSFETs with Uniaxial Compressive Strain
• Low-Pressure Crystallization of Sol-Gel-Derived PbZr_Ti_O_3 Thin Films at Low Temperature for Low-Voltage Operation
• Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
• Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
• Reduction of Off-State Leakage Current in Schottky Barrier Thin-Film Transistors (SBTFT) by a Field-Induced Drain
• Enhanced Negative-Bias-Temperature Instability of P-Channel Metal-Oxide-Semiconductor Transistors due to Plasma Charging Damage
• Conduction Mechanisms for Off-State Leakage Current of Schottky Barrier Thin-Film Transistors (SBTFT)
• Post-Soft-Breakdown Characteristics of Deep Sub-Micron NMOSFETs with Ultra-Thin Gate Oxide
• Enhanced Negative-Bias-Temperature Instability of P-Channel MOSFET by Plasma Charging Damage
• The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
• High-Brightness Wafer-Bonded Indium-Tin Oxide/Light-Emitting Diode/Mirror/Si
• Wafer-Bonded AlGaInP/Au/AuBe/SiO_2/Si Light-Emitting Diodes
• Etching Characteristics of (Ba, Sr)TiO_3 Thin Films in an Inductively Coupled Plasma
• Breakdown Modes and Their Evolution in Ultrathin Gate Oxide
• Conformal Step Coverage and Trench Filling of Liquid Phase Oxide Deposition
• The Improvement of Liquid Phase Deposition of Silicon Dioxide with Hydrochlorie Acid Incorporation
• Impacts of SiN Deposition Conditions on NMOSFETs
• Improvement of Effective Charges in Oxynitride Prepared by Liquid Phase Deposition on Silicon
• Flow-Rate Modulation Epitaxial Growth of Zn_Mg_yS_xSe_ on GaAs
• Heteroepitaxial Growth of ZnSxSe1-x on GaAs0.6P0.4/GaAs by Metalorganic Vapor Phase Epitaxy
• Flatness Improvement of GaAs Observed by Atomic Force Microscopy Using Flow Rate Modulation Epitaxy
• Direct Bonding of Gallium Arsenide on Silicon
• Wafer-Bonded 859-nm Vertical-Cavity Surface-Emitting Lasers on Si Substrate with Metal Mirror
• Properties of TiO2 Thin Films on GaAs Prepared by Metalorganic Chemical Vapor Deposition
• Properties of TiO_2 Thin Films on InP substrate Prepared by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
• Blue Light Emitting Diode
• Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
• Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
• Thinning Technology for Lithium Niobate Wafer by Surface Activated Bonding and Chemical Mechanical Polishing
• Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
• High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating
• Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
• Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes
• Fabrications of Si Thin-Film Solar Cells by Hot-Wire Chemical Vapor Deposition and Laser Doping Techniques
• Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium–Tin-Oxide/Al Mirror
• GaN-Based Green Resonant Cavity Light-Emitting Diodes
• Utilization of GaAs Masking Layers for Formation of Patterned Porous Silicon
• Rapid-Thermal-Processed BaTiO3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition

もっと見る 閉じる

スポンサーリンク