Flatness Improvement of GaAs Observed by Atomic Force Microscopy Using Flow Rate Modulation Epitaxy
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概要
- 論文の詳細を見る
From atomic force microscope observation, the flatness of a GaAs homoepitaxial layer is improved on an atomic scale by arsine modulation metalorganic chemical vapor deposition. Furthermore, a full width at half-maximum of 6.4meV for photoluminescence at 77K can be obtained under optimum growth conditions. The amplitude of the satellite peak around the near band emission can also be reduced significantly. The satellite peak is associated with arsenic related antisite defects.
- 社団法人応用物理学会の論文
- 1997-01-15
著者
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LEE Ming-Kwei
Department of Electrical Engineering, National Sun Yat-sen University
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Hu C.c.
Department Of Electrical Engineering National Sun Yat-sen University
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Lee Ming-kwei
Department Of Elecrrical Engineering National Sun Yat-sen University
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