Very Low Leakage Current of High Band-Gap Al2O3 Stacked on TiO2/InP Metal--Oxide--Semiconductor Capacitor with Sulfur and Hydrogen Treatments
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概要
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High dielectric TiO2 film on InP treated by (NH4)2S shows improved electrical characteristics due to the removal of native oxides. Post-metallization annealing (PMA) can provide hydrogen ions, which effectively passivate defects in TiO2/InP film and interface, further improve electrical characteristics but still with high thermionic emission leakage due to low band-gap TiO2. For high band-gap Al2O3 stacked on PMA-TiO2/S--InP MOS structure with equivalent oxide thickness of 1.8 nm, the leakage current densities can be decreased as low as 1.5\times 10^{-8} and 2.2\times 10^{-7} A/cm2 at \pm 2 V, and the interface state density is 3.1\times 10^{11} cm-2 eV-1.
- 2012-08-25
著者
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Lee Ming-kwei
Department Of Elecrrical Engineering National Sun Yat-sen University
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Yen Chih-Feng
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan, R.O.C.
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Lee Ming-Kwei
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan, R.O.C.
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