Stabilizing Light Emission of Porous Silicon by In-situ Treatment
スポンサーリンク
概要
- 論文の詳細を見る
The photoluminescence of porous silicon prepared by etching in an aqueous solution of hydrofluoric acid mixed with phosphoric and that with nitric acid were red and orange, respectively. The optical characteristics were stable under laser illumination or when stored in air for the aging test. For etching in an aqueous hydrofluoric acid/phosphoric acid electrolyte, the stability is attributed to the existence of Si–P and P–O–Si bonds formed on the porous silicon surface. For etching in an aqueous hydrofluoric acid/nitric acid electrolyte, it is attributed to more Si–O bonds formed on the porous silicon surface.
- 2007-05-15
著者
-
Lee Ming-kwei
Department Of Elecrrical Engineering National Sun Yat-sen University
-
Tu Hwai-Fu
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan 80824, R.O.C.
関連論文
- Characterization of Thermally Annealed Fluorinated Silicon Dioxide Films Prepared by Liquid-Phase Deposition
- Properties of TiO_2 Thin Films on InP Substrate Prepared by Liquid Phase Deposition : Short Note
- Characterization of Titanium Oxide Films Prepared by LIquid Phase Deposition Using Hexafluorotitanic Acid
- The Protrusion of Liquid Phase Oxide Deposition on Patterned Silicon Wafer with Silicon Nitride as Mask
- Conformal Step Coverage and Trench Filling of Liquid Phase Oxide Deposition
- The Improvement of Liquid Phase Deposition of Silicon Dioxide with Hydrochlorie Acid Incorporation
- Improvement of Effective Charges in Oxynitride Prepared by Liquid Phase Deposition on Silicon
- Flow-Rate Modulation Epitaxial Growth of Zn_Mg_yS_xSe_ on GaAs
- Heteroepitaxial Growth of ZnSxSe1-x on GaAs0.6P0.4/GaAs by Metalorganic Vapor Phase Epitaxy
- Flatness Improvement of GaAs Observed by Atomic Force Microscopy Using Flow Rate Modulation Epitaxy
- Direct Bonding of Gallium Arsenide on Silicon
- High-Quality SiO2 Grown on (NH4)2Sx-Treated GaAs by Liquid Phase Deposition
- Electrical Improvement of Fluorine-Passivated Metal–Organic Chemical Vapor Deposited TiO2 Film on (NH4)2Sx-treated GaAs
- Properties of TiO2 Thin Films on GaAs Prepared by Metalorganic Chemical Vapor Deposition
- Properties of TiO_2 Thin Films on InP substrate Prepared by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Optical Output Power Enhancement of Gallium Nitride Light-Emitting Diodes with Microlens Array on p-GaN Layer and Wave-Patterned Sidewalls by Gas-Assisted Focused Ion Beam Etching
- Improvement in Electrical Characteristics of Low-Pressure Chemical-Vapor-Deposited SiNx Dielectric Layer on GaN Substrate by Ammonium Sulfide Treatment
- Enhancement of Ultraviolet and Visible Emissions of ZnO with Zn by Thermal Treatment
- Gas-Assisted Focused Ion Beam Etching of Indium–Tin Oxide Film
- Leakage Current Improvement of Liquid-Phase-Deposited TixSi1-xOy Films on Amorphous Silicon with Ammonium Hydroxide Incorporation by Postmetallization Annealing
- Electrical Characteristics of Strontium Titanate Films Prepared by Liquid Phase Deposition
- Stabilizing Light Emission of Porous Silicon by In-situ Treatment
- Preparation of Niobium-Doped Titanium Oxide Film by Liquid Phase Deposition
- Characteristics of Liquid-Phase-Deposited TiO2 Film on Hydrogenated Amorphous Silicon
- Gas-Assisted Etching of Sapphire Using Focused Ion Beam
- Very Low Leakage Current of High Band-Gap Al2O3 Stacked on TiO2/InP Metal--Oxide--Semiconductor Capacitor with Sulfur and Hydrogen Treatments
- Utilization of GaAs Masking Layers for Formation of Patterned Porous Silicon
- Characteristics of liquid phase deposited SiO