The Improvement of Liquid Phase Deposition of Silicon Dioxide with Hydrochlorie Acid Incorporation
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概要
- 論文の詳細を見る
Liquid phase deposition of silicon dioxide (LPD-SiO_2) provides the advantages of room temperature growth, good step coverage and selective growth, and has high potential in integrated circuit fabrications. In this paper, a simple method to improve the quality of LPD-SiO_2 was developed with the incorporation of hydrochloric acid (HCl) which can enhance the deposition rate of LPD-SiO_2. From the current-voltage and capacitance-voltage characteristics, the flat-band voltage and leakage current were improved by HCl incorporation into LPD-SiO_2 films.
- 社団法人応用物理学会の論文
- 1998-06-01
著者
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LEE Ming-Kwei
Department of Electrical Engineering, National Sun Yat-sen University
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YANG Ching-Nan
Department of Electrical Engineering, National Sun Yat-Sen University
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LIN Ching-Hsing
Department of Electrical Engineering, National Sun Yat-Sen University
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Yang Chi-da
Department Of Electrical Engineering National Sun Yat-sen University
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Lee Ming-kwei
Department Of Elecrrical Engineering National Sun Yat-sen University
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Yang Ching-nan
Department Of Elecrrical Engineering National Sun Yat-sen University
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LIN Ching-Using
Department of Elecrrical Engineering, National Sun Yat-sen University
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Lin Ching-using
Department Of Elecrrical Engineering National Sun Yat-sen University
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Lin Ching-Hsing
Department of Elecrrical Engineering, National Sun Yat-sen University
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