Improvement in Electrical Characteristics of Low-Pressure Chemical-Vapor-Deposited SiNx Dielectric Layer on GaN Substrate by Ammonium Sulfide Treatment
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概要
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The electrical characteristics of low-pressure chemical-vapor-deposited SiNx on GaN and ammonium sulfide-treated GaN substrate were investigated. Upon ammonium sulfide treatment, the leakage current densities of SiNx/GaN were reduced from $1.82 \times 10^{-9}$ to $2 \times 10^{-10}$ A/cm2 and from $4.44 \times 10^{-9}$ to $1.6 \times 10^{-9}$ A/cm2 under electric fields of $\pm 1$ MV/cm, respectively. The negative effective oxide charges were improved from $-1.39 \times 10^{13}$ to $-4.1 \times 10^{12}$ C/cm2. The ammonium sulfide treatment improves the interface and film qualities of SiNx/GaN.
- 2009-12-25
著者
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Ho Chen-lin
Department Of Electrical Engineering National Sun Yat-sen University
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Lee Ming-kwei
Department Of Elecrrical Engineering National Sun Yat-sen University
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Lee Cheng-Yuan
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
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Ho Chen-Lin
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
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