Properties of TiO2 Thin Films on GaAs Prepared by Metalorganic Chemical Vapor Deposition

概要

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The deposition of polycrystalline TiO2 films on GaAs substrate is studied by metalorganic chemical vapor deposition (MOCVD) with Ti(i-OC3H7)4 and O2 as the precursors in a temperature range of 280–550°C. The structure, growth rate and grain size of TiO2 films depend on the deposition temperature. The film composition was measured by dispersive X-ray spectroscopy. From capacitance–voltage and current–voltage measurements of the Al/TiO2/GaAs/Au–Zn structure, the dielectric constant can reach 64 with the leakage current of $1\times 10^{-5}$ A/cm2 at 0.05 MV/cm at 350°C and the refractive index of TiO2 films can reach 2.2. At 300°C, the dielectric constant and leakage current density were 43 and $1\times 10^{-5}$ A/cm2 at 0.05 MV/cm and the refractive index of TiO2 films can reach 2.4.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-07-15