Gas-Assisted Etching of Sapphire Using Focused Ion Beam
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概要
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The etching parameters of ion beam current, beam overlap percentage and beam dwelling time for focused-ion-beam etching and gas-assisted focused-ion-beam etching on sapphire substrate have been investigated. The etching rate increases with gallium ion beam current for focused-ion-beam etching. The etching rate can be greatly enhanced using a xenon difluoride gas-assisted focused-ion-beam and a sharp depth profile can be obtained owing to less re-deposition and more efficient chemical etching. The etching rate of xenon difluoride gas-assisted focused-ion-beam etching decreases with beam overlap percentage and resulting beam dwelling time. These relationships could be due to the higher re-deposition rate that resulted from the higher etching rate of gas-assisted focused-ion-beam etching.
- 2006-04-15
著者
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Lee Ming-kwei
Department Of Elecrrical Engineering National Sun Yat-sen University
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Kuo Kwei-Kuan
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan, R.O.C.
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Kuo Kwei-Kuan
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan, R.O.C.
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Lee Ming-Kwei
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan, R.O.C.
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