Utilization of GaAs Masking Layers for Formation of Patterned Porous Silicon

概要

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GaAs on a Si heteroepitaxial layer grown by metalorganic chemical vapor deposition (MOCVD) is used as the masking layer for the fabrication of porous silicon (PS) on silicon substrates. The photoluminescence (PL) of PS shows red light centered at a wavelength of around 630 nrn. Of particular interest in the utilization of the GaAs masking layer is the anisotropic growth of PS (lateral/vertical growth ratio < 1), the much higher resistance to anodization in HF solution than other kinds of masking layers (nitride, oxide, SiC, etc.) and lack of destruction in non-PS regions (implantation or irradiation), The nitride masking layer used to define the growth of PS is also studied. Surface and cross-sectional scanning electron microscopy (SEM) are carried out to determine which mask is better. The GaAs masking layer studied in this paper will lead to the realization of PS optoelectronic integrated circuits (OEIC).
社団法人応用物理学会の論文
1996-07-15