Etching Characteristics and Mechanism of Ba_<0.7>Sr_<0.3>TiO_3 Thin Films in an Inductively Coupled Plasma
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
-
LEE Ming-Kwei
Department of Electrical Engineering, National Sun Yat-sen University
-
HORNG Ray-Hua
Institute of Precision Engineering, National Chung Hsing University
-
WUU Dong-Sing
Institute of Electrical Engineering, Da-Yeh University
-
LIAO Fang-Ching
Institute of Electrical Engineering, Da-Yeh University
-
KUO Nei-Hao
Institute of Electrical Engineering, Da-Yeh University
-
LEE Ming-Kwei
Institute of Electrical Engineering, National Sun Yat-Sen University
-
Horng R‐h
National Chung Hsing Univ. Taichung Twn
-
Lee M‐k
National Sun Yat‐sen Univ. Kaohsiung Twn
-
Horng Ray-hua
Institute Of Precision Egineering National Chung Hsing University
-
Kuo Nei-hao
Institute Of Electrical Engineering Da-yeh University
-
Wuu D‐s
National Chung Hsing Univ. Taichung Twn
-
Liao Fang-ching
Institute Of Electrical Engineering Da-yeh University
-
Wuu Dong-sing
Institute Of Electrical Engineering Da-yeh University
-
Horng Ray-Hua
Institute of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan, ROC
関連論文
- Characterization of Thermally Annealed Fluorinated Silicon Dioxide Films Prepared by Liquid-Phase Deposition
- Properties of TiO_2 Thin Films on InP Substrate Prepared by Liquid Phase Deposition : Short Note
- Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium-Tin-Oxide/Al Mirror (Special Issue: Solid State Devices & Materials)
- Improvements in for N-Side-Up GaN/Mirror/Si LEDs Using High Reflective Ohmic Contacts
- Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes
- Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
- Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
- Improvement in GaN-based light-emitting diodes by surface texturization with natural lithography
- GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
- Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
- High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating
- Ion-Implantation Treatment(Ba, Sr)TiO_3 Thin Films
- Etching Characteristics and Mechanism of Ba_Sr_TiO_3 Thin Films in an Inductively Coupled Plasma
- Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications
- Rapid-Thermal-Processed BaTiO_3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition
- Characterization of Thin-Film Electroluminescent Devices with Multiple Ta_2O_5 Interlayers Incorporated into SrS:Pr,Ce Phosphor
- Preparation of Niobium-Doped Titanium Oxide Film by Liquid Phase Deposition
- Characterization of Titanium Oxide Films Prepared by LIquid Phase Deposition Using Hexafluorotitanic Acid
- The Protrusion of Liquid Phase Oxide Deposition on Patterned Silicon Wafer with Silicon Nitride as Mask
- Thinning Technology for Lithium Niobate Wafer by Surface Activated Bonding and Chemical Mechanical Polishing (Special Issue: Solid State Devices & Materials)
- Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
- High-Brightness Wafer-Bonded Indium-Tin Oxide/Light-Emitting Diode/Mirror/Si
- Wafer-Bonded AlGaInP/Au/AuBe/SiO_2/Si Light-Emitting Diodes
- Etching Characteristics of (Ba, Sr)TiO_3 Thin Films in an Inductively Coupled Plasma
- Conformal Step Coverage and Trench Filling of Liquid Phase Oxide Deposition
- The Improvement of Liquid Phase Deposition of Silicon Dioxide with Hydrochlorie Acid Incorporation
- Improvement of Effective Charges in Oxynitride Prepared by Liquid Phase Deposition on Silicon
- Flow-Rate Modulation Epitaxial Growth of Zn_Mg_yS_xSe_ on GaAs
- Heteroepitaxial Growth of ZnSxSe1-x on GaAs0.6P0.4/GaAs by Metalorganic Vapor Phase Epitaxy
- Flatness Improvement of GaAs Observed by Atomic Force Microscopy Using Flow Rate Modulation Epitaxy
- Direct Bonding of Gallium Arsenide on Silicon
- Wafer-Bonded 859-nm Vertical-Cavity Surface-Emitting Lasers on Si Substrate with Metal Mirror
- Properties of TiO2 Thin Films on GaAs Prepared by Metalorganic Chemical Vapor Deposition
- Properties of TiO_2 Thin Films on InP substrate Prepared by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Blue Light Emitting Diode
- Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
- Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
- Thinning Technology for Lithium Niobate Wafer by Surface Activated Bonding and Chemical Mechanical Polishing
- Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
- High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating
- Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
- Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes
- Fabrications of Si Thin-Film Solar Cells by Hot-Wire Chemical Vapor Deposition and Laser Doping Techniques
- Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium–Tin-Oxide/Al Mirror
- GaN-Based Green Resonant Cavity Light-Emitting Diodes
- High-Brightness Wafer-Bonded Indium-Tin Oxide/Light-Emitting Diode/Mirror/Si
- Characteristics of Flip-Chip InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates
- High-Performance AlGaInP/GaAs Light-Emitting Diodes with a Carbon-Doped GaP/Indium–Tin Oxide Contact Layer
- Growth and Characterization of Epitaxial ZnO Nanowall Networks Using Metal Organic Chemical Vapor Deposition
- GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
- Utilization of GaAs Masking Layers for Formation of Patterned Porous Silicon
- Rapid-Thermal-Processed BaTiO3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition