Thinning Technology for Lithium Niobate Wafer by Surface Activated Bonding and Chemical Mechanical Polishing
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概要
- 論文の詳細を見る
A lithium niobate (LiNbO3) hybrid wafer was developed by a combination of wafer bonding and chemical mechanical polishing. In this study, various plasma ambients were applied to activate the surface of LiNbO3 and Si substrate to bond the wafers at room temperature. After the surface activated bonding process, the LiNbO3 substrate was lapped by chemical mechanical polishing. The thickness of the 10 cm diameter LiNbO3 substrate can be decreased from 400 to 10 μm without generating serious cracks. Under the optimum lapping parameters, a 1.5 nm surface roughness of the LiNbO3 film can be obtained.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Horng Ray-hua
Institute Of Precision Egineering National Chung Hsing University
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Wu Chia-cheng
Department Of Materials Engineering National Chung Hsing University
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Chen Tsai-ning
Department Of Materials Engineering National Chung Hsing University
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Wuu Dong-Sing
Department of Electrical Engineering, Da-Yeh University
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Wu Chia-Cheng
Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.
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Ting Chia-Jen
Mechanical Industry Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, R.O.C.
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Ho Shih-Shian
Mechanical Industry Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, R.O.C.
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Tsai Hung-Yin
Mechanical Industry Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, R.O.C.
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Ting Chia-Jen
Mechanical and Systems Research Laboratories, Industrial Technology Research Institute, Taiwan 310, R.O.C.
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Chen Tsai-Ning
Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.
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Horng Ray-Hua
Institute of Precision Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.
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Horng Ray-Hua
Institute of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan, ROC
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