Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding

スポンサーリンク

概要

• 論文の詳細を見る

• High-brightness AlGaInP/mirror/barrier/Si light-emitting diodes (LEDs) with vertical electrodes were fabricated using a wafer bonding technique. The high-thermal-conductivity Si substrate provides a better heat sink (compared with GaP or GaAs), which is a particularly important characteristic for high-power, large-area emitter applications. It allows for saturation of the small-area LED ($300\times 300$ μm2) after 150 mA injection and for the large-area LED ($1200\times 1200$ μm2) to increase output power even at 300 mA injection. The light output of the large-area vertical-conducting LED is mainly affected by the top-side (i.e., $n$-AlGaInP cladding) electrode design, where an interdigitated-finger electrode provides the better current spreading performance and prevents the current crowding problem. The extent of junction heating on LED samples ($300\times 300--1200\times 1200$ μm2) can also be evaluated from the corresponding electroluminescence spectra and emission-peak-wavelength driven by different injection current values. Finally, using a natural lithography technique, the mirror-substrate (MS) LEDs with textured surfaces present a brightness of 10 cd, which is about 4 cd brighter than that of the MS LED without a textured surface. With a combination of the MS wafer bonding and surface texturing techniques, thermal management in packaging becomes the key factor in further enhancing the external quantum efficiency of large-area LEDs under high flux operation.

• 2004-05-15

著者

• HUANG Shao-Hua

  Department of Materials Engineering, National Chung Hsing University

• JIANG Yann-Zyh

  Institute of Precision Engineering, National Chung Hsing University

• Horng Ray-hua

  Institute Of Precision Egineering National Chung Hsing University

• Wuu Dong-Sing

  Department of Electrical Engineering, Da-Yeh University

• Jiang Yann-Zyh

  Institute of Precision Engineering, National Chung Hsing University, Taichung, Taiwan 402, ROC.

• Horng Ray-Hua

  Institute of Precision Engineering, National Chung Hsing University, Taichung, Taiwan 402, ROC.

• Huang Shao-Hua

  Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 402, ROC.

• Horng Ray-Hua

  Institute of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan, ROC

関連論文

• Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium-Tin-Oxide/Al Mirror (Special Issue: Solid State Devices & Materials)
• Improvements in for N-Side-Up GaN/Mirror/Si LEDs Using High Reflective Ohmic Contacts
• Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes
• Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
• Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
• Improvement in GaN-based light-emitting diodes by surface texturization with natural lithography
• GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
• Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
• High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating
• Ion-Implantation Treatment(Ba, Sr)TiO_3 Thin Films
• Etching Characteristics and Mechanism of Ba_Sr_TiO_3 Thin Films in an Inductively Coupled Plasma
• Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications
• Rapid-Thermal-Processed BaTiO_3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition
• Characterization of Thin-Film Electroluminescent Devices with Multiple Ta_2O_5 Interlayers Incorporated into SrS:Pr,Ce Phosphor
• Thinning Technology for Lithium Niobate Wafer by Surface Activated Bonding and Chemical Mechanical Polishing (Special Issue: Solid State Devices & Materials)
• Transparent barrier coatings for flexible organic light-emitting diode applications
• Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
• High-Brightness Wafer-Bonded Indium-Tin Oxide/Light-Emitting Diode/Mirror/Si
• Wafer-Bonded AlGaInP/Au/AuBe/SiO_2/Si Light-Emitting Diodes
• Etching Characteristics of (Ba, Sr)TiO_3 Thin Films in an Inductively Coupled Plasma
• Wafer-Bonded 859-nm Vertical-Cavity Surface-Emitting Lasers on Si Substrate with Metal Mirror
• Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
• Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
• Thinning Technology for Lithium Niobate Wafer by Surface Activated Bonding and Chemical Mechanical Polishing
• Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
• High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating
• Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
• Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes
• Fabrications of Si Thin-Film Solar Cells by Hot-Wire Chemical Vapor Deposition and Laser Doping Techniques
• Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium–Tin-Oxide/Al Mirror
• GaN-Based Green Resonant Cavity Light-Emitting Diodes
• High-Brightness Wafer-Bonded Indium-Tin Oxide/Light-Emitting Diode/Mirror/Si
• Characteristics of Flip-Chip InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates
• High-Performance AlGaInP/GaAs Light-Emitting Diodes with a Carbon-Doped GaP/Indium–Tin Oxide Contact Layer
• Growth and Characterization of Epitaxial ZnO Nanowall Networks Using Metal Organic Chemical Vapor Deposition
• GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
• Rapid-Thermal-Processed BaTiO3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition

もっと見る 閉じる

スポンサーリンク