GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques

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概要

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• A p-side-up GaN/mirror/Si light-emitting diode (LED) for vertical current injection has been fabricated by laser lift-off and wafer bonding techniques. A variety of metallic mirrors (Au, Al, and Ag) were chosen to improve the optical reflectivity and contact resistance with n-GaN. The GaN/mirror/Si LED with a silver mirror achieved a maximum luminance intensity of 45 mcd (20 mA) with a low forward voltage of 3.5 V. This luminance intensity is over two times that of the original planar GaN/sapphire LED. Under high current injection, the GaN/mirror(Ag)/Si LED also showed a more stable emission wavelength than the planar GaN/sapphire LED. This can be explained by the fact that the Si substrate provides a good heat sink and alleviates the joule heating problem. On the basis of these results, the p-side-up structure confirms the possibility of the simultaneous realization of a lower contact resistance and higher reflectivity for GaN/mirror/Si LEDs.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-08-15

著者

• Lee Chia-en

  Department Of Electrical Engineering National Chung Hsing University

• HUANG Shao-Hua

  Department of Materials Engineering, National Chung Hsing University

• Hsu Shun-cheng

  Department Of Materials Engineering National Chung Hsing University

• Horng Ray-hua

  Institute Of Precision Egineering National Chung Hsing University

• Wu Chia-cheng

  Department Of Materials Engineering National Chung Hsing University

• Wuu Dong-Sing

  Department of Electrical Engineering, Da-Yeh University

• Wu Chia-Cheng

  Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.

• Wuu Dong-Sing

  Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.

• Horng Ray-Hua

  Institute of Precision Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.

• Huang Shao-Hua

  Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.

• Lee Chia-En

  Department of Electrical Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.

• Horng Ray-Hua

  Institute of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan, ROC

関連論文

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