Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates

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概要

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• We describe the microstructure and optical properties of near-ultraviolet InGaN-GaN light-emitting diodes (LEDs) fabricated onto conventional and patterned sapphire substrates (PSSs) using metalorganic chemical vapor deposition. The PSS LED with an optimized hole depth (1.5 μm) shows an improvement of the room-temperature photoluminescence intensity by one order of magnitude compared with that of the conventional LED. As much as a 63% increased light emission intensity of the PSS LED was obtained at a forward current of 20 mA. For a typical lamp-form PSS LED (at 20 mA), the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The increase of the output power could be partly due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, which was further confirmed by the transmission-electron-microscopy and etch-pit-density studies for the GaN-on-PSS samples. Moreover, the emitted light scattering at the GaN/PSS interface could also contribute to the enhancement of light extraction efficiency.

• 2005-04-15

著者

• Lee Chia-en

  Department Of Electrical Engineering National Chung Hsing University

• SHIH Wen-Chung

  Institute of Electro-Optical & Material Science, National Formosa University

• FANG Jau-Shing

  Institute of Electro-Optical & Material Science, National Formosa University

• HSU Ta-Cheng

  Epistar Corporation

• HUO Tai-Chan

  Epistar Corporation

• JOU Ming-Jiunn

  Epistar Corporation

• LIN Aikey

  Wafer Works Corporation

• YU Yuan-Hsin

  Wafer Works Corporation

• Lin Wen-yu

  Department Of Materials Engineering National Chung Hsing University

• Wang Woei-kai

  Department Of Materials Engineering National Chung Hsing University

• Horng Ray-hua

  Institute Of Precision Egineering National Chung Hsing University

• Han Pin

  Institute Of Precision Engineering National Chung Hsing University

• Wuu Dong-Sing

  Department of Electrical Engineering, Da-Yeh University

• Lin Wen-Yu

  Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 402, Republic of China

• Wuu Dong-Sing

  Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 402, Republic of China

• Wang Woei-Kai

  Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 402, Republic of China

• Shih Wen-Chung

  Institute of Electro-Optical & Material Science, National Formosa University, Huwei, Taiwan 632, Republic of China

• Yu Yuan-Hsin

  Wafer Works Corporation, Taoyuan, Taiwan 326, Republic of China

• Huo Tai-Chan

  Epistar Corporation, Hsinchu, Taiwan 300, Republic of China

• Lee Chia-En

  Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 402, Republic of China

• Fang Jau-Shing

  Institute of Electro-Optical & Material Science, National Formosa University, Huwei, Taiwan 632, Republic of China

• Horng Ray-Hua

  Institute of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan, ROC

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