GaN-Based Green Resonant Cavity Light-Emitting Diodes
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概要
- 論文の詳細を見る
GaN-based resonant cavity light-emitting diodes (RCLEDs) have been successfully fabricated on Si substrate by laser lift-off and wafer bonding techniques. A five-pair TiO2/SiO2 dielectric distributed Bragg reflector (DBR) (with 85% reflectivity) and an Ag layer (with 99% reflectivity) were employed as top and bottom mirrors, respectively, for front emission RCLEDs. The room temperature light output power of the RCLED was 1.5 times that of similar LED structures without a top DBR mirror under 20 mA injection current. The cavity modes exhibit a linewidth of 5.5 nm at 525 nm wavelength, which corresponds to a quality factor about 100. Moreover, the full width at half maximum of the emission can be reduced to 35 nm, as a result of the effect of the resonant cavity.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Horng Ray-hua
Institute Of Precision Egineering National Chung Hsing University
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Huang Shih-yung
Department Of Materials Engineering National Chung Hsing University
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Wang Wei-kai
Department Of Materials Engineering National Chung Hsing University
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Wuu Dong-Sing
Department of Electrical Engineering, Da-Yeh University
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Wuu Dong-Sing
Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.
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Huang Shih-Yung
Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan 402, R.O.C.
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Horng Ray-Hua
Institute of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan, ROC
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