High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating

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概要

• 論文の詳細を見る

• We have developed a large-area ($1.2\,\text{mm} \times 1.2\,\text{mm}$) chip structure for high-power AlGaInP/mirror/Cu light-emitting diodes (LEDs) to improve both the heat dissipation and substrate light-absorbing problems encountered in conventional AlGaInP/GaAs LED samples. Especially, this LED samples can be accomplished without additional dicing process. It was found that the peak-spectral wavelength of the AlGaInP LED with an electroplated copper substrate exhibited only about 3 nm shift at 400 mA, corresponding to a ${\sim}30$°C rising in the junction temperature. However, the junction temperature increased to 110°C easily for the AlGaInP/GaAs LED sample under a current injection of 400 mA. This indicates that the joule heating is less pronounced for the high-power AlGaInP/mirror/Cu LED sample where the metallic substrate provides a good heat sink.

• Japan Society of Applied Physicsの論文
• 2004-04-15

著者

• Lee Chia-en

  Department Of Electrical Engineering National Chung Hsing University

• HUANG Shao-Hua

  Department of Materials Engineering, National Chung Hsing University

• Kung Chung-yuan

  Department Of Electrical Engineering National Chung Hsing University

• Horng Ray-hua

  Institute Of Precision Egineering National Chung Hsing University

• Wuu Dong-Sing

  Department of Electrical Engineering, Da-Yeh University

• Kung Chung-Yuan

  Department of Electrical Engineering, National Chung Hsing University, Taichung 402, Taiwan, R. O. C.

• Wuu Dong-Sing

  Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan, R. O. C.

• Horng Ray-Hua

  Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan, R. O. C.

• Huang Shao-Hua

  Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan, R. O. C.

• Horng Ray-Hua

  Institute of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan, ROC

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