Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium-Tin-Oxide/Al Mirror (Special Issue: Solid State Devices & Materials)
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関連論文
- Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium-Tin-Oxide/Al Mirror (Special Issue: Solid State Devices & Materials)
- Improvements in for N-Side-Up GaN/Mirror/Si LEDs Using High Reflective Ohmic Contacts
- Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes
- Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
- Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
- Improvement in GaN-based light-emitting diodes by surface texturization with natural lithography
- GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
- Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
- High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating
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- Etching Characteristics and Mechanism of Ba_Sr_TiO_3 Thin Films in an Inductively Coupled Plasma
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- Thinning Technology for Lithium Niobate Wafer by Surface Activated Bonding and Chemical Mechanical Polishing (Special Issue: Solid State Devices & Materials)
- Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
- High-Brightness Wafer-Bonded Indium-Tin Oxide/Light-Emitting Diode/Mirror/Si
- Wafer-Bonded AlGaInP/Au/AuBe/SiO_2/Si Light-Emitting Diodes
- Etching Characteristics of (Ba, Sr)TiO_3 Thin Films in an Inductively Coupled Plasma
- Wafer-Bonded 859-nm Vertical-Cavity Surface-Emitting Lasers on Si Substrate with Metal Mirror
- Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
- Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
- Thinning Technology for Lithium Niobate Wafer by Surface Activated Bonding and Chemical Mechanical Polishing
- Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
- High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating
- Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
- Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes
- Fabrications of Si Thin-Film Solar Cells by Hot-Wire Chemical Vapor Deposition and Laser Doping Techniques
- Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium–Tin-Oxide/Al Mirror
- GaN-Based Green Resonant Cavity Light-Emitting Diodes
- High-Brightness Wafer-Bonded Indium-Tin Oxide/Light-Emitting Diode/Mirror/Si
- Characteristics of Flip-Chip InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates
- High-Performance AlGaInP/GaAs Light-Emitting Diodes with a Carbon-Doped GaP/Indium–Tin Oxide Contact Layer
- Growth and Characterization of Epitaxial ZnO Nanowall Networks Using Metal Organic Chemical Vapor Deposition
- GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
- Rapid-Thermal-Processed BaTiO3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition