Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-05-15
著者
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HORNG Ray-Hua
Institute of Precision Engineering, National Chung Hsing University
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HUANG Shao-Hua
Department of Materials Engineering, National Chung Hsing University
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HSU Shun-Cheng
Department of Materials Engineering, National Chung Hsing University
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CHEN Tsung-Yu
R&D Department, Advanced Epitaxy Technology Inc.
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WUU Dong-Sing
Department of Materials Engineering, National Chung Hsing University
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Horng Ray-hua
Institute Of Precision Egineering National Chung Hsing University
関連論文
- Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium-Tin-Oxide/Al Mirror (Special Issue: Solid State Devices & Materials)
- Improvements in for N-Side-Up GaN/Mirror/Si LEDs Using High Reflective Ohmic Contacts
- Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes
- Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
- Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
- Improvement in GaN-based light-emitting diodes by surface texturization with natural lithography
- GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
- Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
- High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating
- Ion-Implantation Treatment(Ba, Sr)TiO_3 Thin Films