Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
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概要
- 論文の詳細を見る
In this study, p-side-up GaN-based light-emitting diodes (LEDs) with textured indium-tin oxide (ITO) or silicon dioxide (SiO2) surface layers were investigated by natural lithography using polystyrene spheres (PSs) as an etching mask. It was found that the ITO top layer provides better roughness than SiO2. Under the optimum surface treatment parameter, the roughnesses of textured ITO and SiO2 surface layers are 140 nm and 15 nm, respectively. The diameter of PSs in the textured ITO surface is still maintained at about 250–300 nm. Correspondingly, the size of PSs in the SiO2 surface is reduced to about 100 nm. The output powers of LEDs with textured ITO and SiO2 surfaces and conventional LEDs are 10.9, 9.5, and 8.5 mW at 20 mA, respectively. LEDs fabricated using the textured ITO surface produced an output power that exceeded that of planar-surface LEDs by about 28% at 20 mA dc current.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Lee Chia-en
Department Of Electrical Engineering National Chung Hsing University
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Lin Wen-yu
Department Of Materials Engineering National Chung Hsing University
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Pan Kuan-fu
Institute Of Precision Engineering National Chung Hsing University
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Su Ying-yong
Institute Of Precision Engineering National Chung Hsing University
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Yang Chiao-chih
Institute Of Precision Engineering National Chung Hsing University
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Horng Ray-hua
Institute Of Precision Egineering National Chung Hsing University
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Wuu Dong-Sing
Department of Electrical Engineering, Da-Yeh University
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Yang Chiao-Chih
Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.
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Wuu Dong-Sing
Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.
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Pan Kuan-Fu
Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.
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Su Ying-Yong
Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.
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Lee Chia-En
Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.
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Horng Ray-Hua
Institute of Electrical Engineering, Da-Yeh University, Chang-Hwa 515, Taiwan, ROC
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