GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-08-15

著者

• Lee Chia-en

  Department Of Electrical Engineering National Chung Hsing University

• HORNG Ray-Hua

  Institute of Precision Engineering, National Chung Hsing University

• HUANG Shao-Hua

  Department of Materials Engineering, National Chung Hsing University

• HSU Shun-Cheng

  Department of Materials Engineering, National Chung Hsing University

• WUU Dong-Sing

  Department of Materials Engineering, National Chung Hsing University

• WU Chia-Cheng

  Department of Materials Engineering, National Chung Hsing University

• Horng Ray-hua

  Institute Of Precision Egineering National Chung Hsing University

関連論文

• Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium-Tin-Oxide/Al Mirror (Special Issue: Solid State Devices & Materials)
• Improvements in for N-Side-Up GaN/Mirror/Si LEDs Using High Reflective Ohmic Contacts
• Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes
• Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
• Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
• Improvement in GaN-based light-emitting diodes by surface texturization with natural lithography
• GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
• Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
• High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating
• Ion-Implantation Treatment(Ba, Sr)TiO_3 Thin Films
• Etching Characteristics and Mechanism of Ba_Sr_TiO_3 Thin Films in an Inductively Coupled Plasma
• Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications
• Rapid-Thermal-Processed BaTiO_3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition
• Characterization of Thin-Film Electroluminescent Devices with Multiple Ta_2O_5 Interlayers Incorporated into SrS:Pr,Ce Phosphor
• High Performances of 650nm Resonant Cavity Light Emitting Diodes for Plastic Optical Fiber Applications
• Thinning Technology for Lithium Niobate Wafer by Surface Activated Bonding and Chemical Mechanical Polishing (Special Issue: Solid State Devices & Materials)
• Transparent barrier coatings for flexible organic light-emitting diode applications
• Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
• High-Brightness Wafer-Bonded Indium-Tin Oxide/Light-Emitting Diode/Mirror/Si
• Wafer-Bonded AlGaInP/Au/AuBe/SiO_2/Si Light-Emitting Diodes
• Etching Characteristics of (Ba, Sr)TiO_3 Thin Films in an Inductively Coupled Plasma
• Wafer-Bonded 859-nm Vertical-Cavity Surface-Emitting Lasers on Si Substrate with Metal Mirror
• Metal Organic Chemical Vapor Deposition Growth of GaN-Based Light Emitting Diodes With Naturally Formed Nano Pyramids
• Near-Ultraviolet InGaN/GaN Light-Emitting Diodes Grown on Patterned Sapphire Substrates
• Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
• High-Performance 650 nm Resonant-Cavity Light-Emitting Diodes for Plastic Optical-Fiber Application
• Power Enhancement of GaN-Based Flip-Chip Light-Emitting Diodes with Triple Roughened Surfaces
• Thinning Technology for Lithium Niobate Wafer by Surface Activated Bonding and Chemical Mechanical Polishing
• Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
• High-Power AlGaInP Light-Emitting Diodes with Patterned Copper Substrates by Electroplating
• Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography
• Surface Texturing for Wafer-Bonded Vertical-Type GaN/Mirror/Si Light-Emitting Diodes
• Fabrications of Si Thin-Film Solar Cells by Hot-Wire Chemical Vapor Deposition and Laser Doping Techniques
• Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium–Tin-Oxide/Al Mirror
• GaN-Based Green Resonant Cavity Light-Emitting Diodes
• High-Brightness Wafer-Bonded Indium-Tin Oxide/Light-Emitting Diode/Mirror/Si
• Characteristics of Flip-Chip InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates
• High-Performance AlGaInP/GaAs Light-Emitting Diodes with a Carbon-Doped GaP/Indium–Tin Oxide Contact Layer
• Growth and Characterization of Epitaxial ZnO Nanowall Networks Using Metal Organic Chemical Vapor Deposition
• GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
• Rapid-Thermal-Processed BaTiO3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition

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