Power Enhancement of GaN-Based Flip-Chip Light-Emitting Diodes with Triple Roughened Surfaces

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概要

• 論文の詳細を見る

• The flip-chip light emitting diodes (FC-LEDs) with triple roughened surfaces were fabricated comprising top surface sapphire textured layer, interface patterned sapphire layer, and bottom naturally textured p-GaN layer. Light extraction efficiency was enhanced by such triple textured layers. The light output power of FC-LEDs was increased 60% (at 350 mA current injection) compared to that of conventional FC-LEDs by implementing the triple roughened surfaces. The enhancement efficiency can be simulated and the simulated results showed the same trend as the results of experiment.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-04-25

著者

• Kuo Hao-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Lu Tien-chang

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Lee Chia-en

  Department Of Electrical Engineering National Chung Hsing University

• Wang Shing-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Cheng Bo-Siao

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan

• Cheng Bo-Siao

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.

• Kuo Hao-Chung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.

• Lu Tien-Chang

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.

• Lee Chia-En

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.

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