Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells ($\lambda = 1.28--1.45$ μm) with GaAsP Strain-Compensated Layers

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概要

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• The effects of nitrogen incorporation into the In0.4Ga0.6As1-xNx/GaAs single quantum wells (SQWs), where $x = 0.5$ and 2%, grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD) were investigated using photoluminescence (PL) and high-resolution transmission electron microscopy (HRTEM). The evolution of the excitation-dependent PL and PL-peak position with temperature between 10 and 300 K shows that quantum-dot-like states occurred at that high nitrogen incorporation ($x = 2$%) and were confirmed by an HRTEM image which showed small dark regions about 2–3 nm in size was found in the interface of In0.4Ga0.6As0.98N0.02 and GaAs. Our investigations indicate that high nitrogen incorporation into the In0.4Ga0.6As1-xNx/GaAs system influenced carrier localization and might cause the formation of the dot-like states.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-08-15

著者

• Kuo Hao-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• CHANG Ya-Hsien

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• Mawst Luke

  Reed Center For Photonics Department Of Electrical Computer Engineering University Of Wisconsin-madi

• Wang Shing-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Yeh Jeng-ya

  Reed Center For Photonics Department Of Electrical Computer Engineering University Of Wisconsin-madi

• Tsai Min-ying

  Department Of Electrical And Computer Engineering University Of California

• Lai Fang-i

  Department Of Electrical Engineering Yuan Ze University

• Wang Shing-Chung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Road, Hsinchu, Taiwan 30050, R.O.C.

• Chu Chia-Pu

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Road, Hsinchu, Taiwan 30050, R.O.C.

• Kuo Shou-Yi

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Road, Hsinchu, Taiwan 30050, R.O.C.

• Tansu Nelson

  Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, 27 Memorial Drive West, Bethlehem, PA 18015, U.S.A.

• Kuo Shou-Yi

  Department of Electronic Engineering, Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan

• Yeh Jeng-Ya

  Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 2414 Engineering Hall, 1415 Engineering Drive, Madison, WI 35706-1691, U.S.A.

• Lai Fang-I

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Road, Hsinchu, Taiwan 30050, R.O.C.

• Mawst Luke

  Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 2414 Engineering Hall, 1415 Engineering Drive, Madison, WI 35706-1691, U.S.A.

• Kuo Hao-Chung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta-Hsueh Road, Hsinchu, Taiwan 30050, R.O.C.

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