Effects of Different n-Electrode Patterns on Optical Characteristics of Large-Area p-Side-Down InGaN Light-Emitting Diodes Fabricated by Laser Lift-Off

スポンサーリンク

概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-11-30

著者

• Chu Jung-tang

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Kuo Hao-chung

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Kuo Hao‐chung

  National Chiao Tung Univ. Hsinchu Twn

• Kuo Hao-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Lu Tien-chang

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Wang S‐c

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• HUANG Hung-Wen

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• KAO Chih-Chiang

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• WANG Shing-Chung

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• LIANG Wen-Deng

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• CHU Chen-Fu

  Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University

• CHU Chen-Fu

  Highlink Corporation

• Chu Jung-tang

  Department Of Photonics & Institute Of Electro-optical Engineering National Chiao Tung Universit

• Wang Shing-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Huang Hung

  Department Of Photonics & Institute Of Electro-optical Engineering National Chiao Tung Universit

関連論文

• Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
• High Temperature Stability 850-nm In_Al_Ga_As/Al_Ga_As Vertical-Cavity Surface-Emitting Laser with Single Al_Ga_As Current Blocking Layer
• Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks
• Fabrication and Micro-Photoluminescence Investigation of Mg-Doped Gallium Nitride Nanorods
• 10Gbps InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers with 1.27μm Emission Wavelengths
• Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells (λ= 1.28-1.45μm) with GaAsP Strain-Compensated Layers
• Fabrication of High Speed Single Mode 1.27μm InGaAs:Sb-GaAsP Quantum Wells Vertical Cavity Surface Emitting Laser
• InGaN/GaN Multi-Quantum-Well Nanorods Fabricated by Plasma Etching Using Self-assembled Nickel Nano-masks
• Galliuln Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching : Semiconductors
• Beryllium-Implanted P-Type GaN With High Carrier Concentration : Semiconductors
• Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H_2O
• Ultraviolet Lasing of Sol-Gel Derived Zinc Oxide Polycrystalline Films
• Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate
• Fabrication of large-area GaN Vertical Light Emitting Diodes on Copper Substrates by Laser Lift-off
• Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
• Dynamic Aperture of Near-Field Super Resolution Structures
• High Performances of 650nm Resonant Cavity Light Emitting Diodes for Plastic Optical Fiber Applications
• Strong Ultraviolet Emission from InGaN/AlGaN Multi Quantum Well Grown by Multi-step Process
• Effects of Different n-Electrode Patterns on Optical Characteristics of Large-Area p-Side-Down InGaN Light-Emitting Diodes Fabricated by Laser Lift-Off
• Enhanced Light Output of InGaN/GaN Light Emitting Diode with Excimer Laser Etching on Nano-roughened P-GaN Surface
• Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser
• Numerical Study on Lateral Mode Behavior of 660-nm InGaP/AlGaInP Multiple-Quantum-Well Laser Diodes
• Lasing Actions of Octagonal Quasi-Periodic Photonic Crystal Microcavities
• Strong ultraviolet emission from InGaN/AlGaN multiple quantum well grown by multi-step process (Special issue: Solid state devices and materials)
• Enhanced Light Output in InGaN/GaN Light Emitting Diodes with Excimer Laser Etching Surfaces (Special Issue: Solid State Devices & Materials)
• Room-Temperature Operation of Optically Pumped Blue-Violet GaN-Based Vertical-Cavity Surface-Emitting Lasers Fabricated by Laser Lift-Off
• Optically pumped GaN-based vertical cavity surface emitting lasers: technology and characteristics (Special issue: Microoptics)
• Effect of Annealing on Low-Threshold-Current Large-Wavelength InGaAs Quantum Well Vertical-Cavity Laser
• Low-Threshold-Current-Density, Long-Wavelength, Highly Strained InGaAs Laser Grown by Metalorganic Chemical Vapor Deposition
• Tunable Light Emission from GaN-Based Photonic Crystal with Ultraviolet AlN/AlGaN Distributed Bragg Reflector
• Light Enhancement of Silicon-Nanocrystal-Embedded SiOx Film on Silicon-on-Insulator Substrate
• Erratum: ``Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates''
• Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
• Enhanced Stimulated Emission from Optically Pumped Gallium Nitride Nanopillars
• Lasing Behavior, Gain Property, and Strong Coupling Effects in GaN-Based Vertical-Cavity Surface-Emitting Lasers
• Room-Temperature Operation of Optically Pumped Blue-Violet GaN-Based Vertical-Cavity Surface-Emitting Lasers Fabricated by Laser Lift-Off
• 4. The Image Effective of the Aluminum Wedge Filter Using in Orthopedic Radiography
• Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar $a$-Plane GaN Revealed by X-ray Diffraction
• Efficiency Improvement of Single-Junction In0.5Ga0.5P Solar Cell with Compositional Grading p-Emitter/Window Capping Configuration
• Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors (Special Issue : Solid State Devices and Materials (1))
• Effects of Inhomogeneous Gain and Loss on Nitride-Based Vertical-Cavity Surface Emitting Lasers
• Metal Organic Chemical Vapor Deposition Growth of GaN-Based Light Emitting Diodes With Naturally Formed Nano Pyramids
• High-Temperature Polariton Lasing in a Strongly Coupled ZnO Microcavity
• Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation
• Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowth
• Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser
• Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate
• High-Temperature Polariton Lasing in a Strongly Coupled ZnO Microcavity
• Characterization of InGaN/GaN Multiple Quantum Well Nanorods Fabricated by Plasma Etching with Self-Assembled Nickel Metal Nanomasks
• Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells ($\lambda = 1.28--1.45$ μm) with GaAsP Strain-Compensated Layers
• Ultraviolet Lasing of Sol–Gel-Derived Zinc Oxide Polycrystalline Films
• High-Performance 650 nm Resonant-Cavity Light-Emitting Diodes for Plastic Optical-Fiber Application
• 10 Gbps InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers with 1.27 μm Emission Wavelengths
• Enhanced Light Output in InGaN/GaN Light Emitting Diodes with Excimer Laser Etching Surfaces
• Performance Enhancement of $a$-Plane Light-Emitting Diodes Using InGaN/GaN Superlattices
• Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate
• Fabrication and Characteristics of GaN-Based Microcavity Light-Emitting Diodes with High Reflectivity AlN/GaN Distributed Bragg Reflectors
• Optically Pumped GaN-based Vertical Cavity Surface Emitting Lasers: Technology and Characteristics
• Enhanced Light Output in InGaN-Based Light-Emitting Diodes with Omnidirectional One-Dimensional Photonic Crystals
• Power Enhancement of GaN-Based Flip-Chip Light-Emitting Diodes with Triple Roughened Surfaces
• Strong Ultraviolet Emission from InGaN/AlGaN Multiple Quantum Well Grown by Multi-step Process
• GaN Thickness Effect on Directional Light Enhancement from GaN-Based Film-Transferred Photonic Crystal Light-Emitting Diodes
• Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures
• Divergent Far-Field III–Nitride Ultrathin Film-Transferred Photonic Crystal Light-Emitting Diodes
• High Extraction Efficiency of GaN-Based Vertical-Injection Light-Emitting Diodes Using Distinctive Indium--Tin-Oxide Nanorod by Glancing-Angle Deposition
• Lasing Actions of Octagonal Quasi-Periodic Photonic Crystal Microcavities
• Demonstrating Applications of Non-optically Regulated Tapping-Mode Near-Field Scanning Optical Microscopy to Nano-optical Metrology and Optical Characterization of Semiconductors
• Fabrication and Characterization of In0.25Ga0.75N/GaN Multiple Quantum Wells Embedded in Nanorods
• Relative Intensity Noise Characteristics of Long-Wavelength Quantum Dot Vertical-Cavity Surface-Emitting Lasers
• Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H2O

もっと見る 閉じる

スポンサーリンク