Strong Ultraviolet Emission from InGaN/AlGaN Multiple Quantum Well Grown by Multi-step Process

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概要

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• We propose a method of realizing strong ultraviolet emission from InGaN/AlGaN multiple quantum wells (MQWs) grown by a multi-step process. During growth of the quantum well layer, only trimethylindium (TMIn) and ammonia were introduced into the reactor, followed by a growth interruption treatment before growth of AlGaN barriers. The growth temperature of QWs dominates the photoluminescence (PL) emission peak position and surface morphologies of the films. It was found that the PL spectra of the samples with MQWs grown at 685 °C showed a strong UV emission at 380 nm. The correlation between surface structures and optical characteristics was studied by cathodoluminescence microscopy. The electroluminescence spectra under various injection currents showed a weak carrier localization effect induced by a quantum-confined Stark effect in the MQW.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-30

著者

• Kuo Hao-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Lu Tien-chang

  Department Of Photonics And Institute Of Electro-optical Engineering National Chiao Tung University

• Yao Hsin-hung

  Department Of Photonics & Institute Of Electro-optical Engineering National Chiao Tung Universit

• CHEN Hou-Guang

  Department of Photonics & Institute of Electro-Optical Engineering National Chiao Tung University

• HSU Nai-Fang

  Department of Photonics & Institute of Electro-Optical Engineering National Chiao Tung University

• Chu Jung-tang

  Department Of Photonics & Institute Of Electro-optical Engineering National Chiao Tung Universit

• Wang Shing-chung

  Department Of Photonic And Institute Of Electro-optical Engineering National Chiao Tung University

• Wang Shing-Chung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan

• Kuo Hao-Chung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan

• Chu Jung-Tang

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan

• Yao Hsin-Hung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan

• Chen Hou-Guang

  Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan

• Lu Tien-Chang

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan

• Hsu Nai-Fang

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan

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